Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 20, Issue 10
Displaying 1-3 of 3 articles from this issue
  • Keiichi NISHIDA
    1977 Volume 20 Issue 10 Pages 338-350
    Published: October 20, 1977
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
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  • Osamu NITTONO, Saburo SHIMIZU
    1977 Volume 20 Issue 10 Pages 351-357
    Published: October 20, 1977
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
    A new X-ray topographic technique of measuring the lattice mismatches between epitaxial films and substrates is reported. The X-ray beams diffracted from the epitaxial film and the substrate at each point of the specimen are recorded on a photographic film at four incident azimuths making 90° to each other by a double-crystal arrangement of non-parallel (+, -) setting, and the local variations in the spacing and the crystallographic orientation of the net planes are separately analyzed. In the present study, for the first crystal were employed various reflections of nearly perfect Si (111) and (100) slices which are usually used for solid state devices. The present technique is simple in mechanism and allows us to study any reflection of various kinds of crystals, in which the fractional variation of spacing Δd/d is of the order of 10-410-5. This technique is applied to study the lattice mismatches between epitaxial garnet films and gadolinium gallium garnet substrates. The apparent symmetry of the epitaxial garnet film was found to be rhombohedral on account of an elastic deformation induced by the lattice mismatch between film and substrate.
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  • Hisao SHIBATA
    1977 Volume 20 Issue 10 Pages 358-364
    Published: October 20, 1977
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
    In order to investigate recrystalization processes in obtaining photoconduction, evaporated CdS films have been annealed; the photosensitivity and the spectro-photosensitivity of the films have been measured. Dark resistivities in excess of 106Ω cm have been obtained by the heat-treated at 500 °C for 30 minutes in air. In the heat-treated films, a remarkable increase in photosensitivity is produced. The photosensitivity is strongly dependent on the resistivity of films, and it is independent of evaporation rate, substrate temperature, film thickness, and heat treatment conditions. The photosensitivity increases monotonically as the resistivity increases, but photoconductivity is not recognized below the resistivities of 104Ω cm. The characteristics of spectro-photosensitivity of CdS films show the maximum sensitivity at the wavelength of 5340Å. In films treated in air, photocurrent decreases remarkably in the range of the wavelength from approximately 5100Å to 5300Å. On the other hand, such a phenomenon is not observed in films treated in vacuum. Therefore, photoconducting properties of CdS films are found to be profoundly influenced by oxygen sorption due to annealing.
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