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Volume 23, Issue 7
Displaying 1-6 of 6 articles from this issue
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Yoshinori ANDO1980 Volume 23 Issue 7 Pages 319-325
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSDownload PDF (11633K) -
Mitsuru NAGANUMA, Shintaro MIYAZAWA1980 Volume 23 Issue 7 Pages 326-332
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSSurface morphology and desorption properties of Sb are investigated on the initial stage of MBE growth of GaSb on GaAs (100) substrate. Investigations were performed by reflection electron diffraction and Auger electron spectroscopy.
In situ observation of reflection electron diffraction patterns indicated that islands having a GaSb lattice are first formed on the substrate at an average thickness of about 6 Å, and that islands become trapezoid shape at 30-100 Å thickness. Ultimately, the substrate is entirely covered with GaSb by stepwise growth in successive deposition.
Desorption of Sb was investigated by the thermally stimulated desorption technique. On the surfaces covered with an Sb monolayer, two kinds of desorption process were observed. Desorption energies were found to be 2.4 eV and 2.6 eV. The difference in desorption energies is discussed from the viewpoint of elastic strain energy caused by a pseudomorphic structure of GaSb.View full abstractDownload PDF (4685K) -
Susumu FUJIMORI1980 Volume 23 Issue 7 Pages 333-338
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSCarbon thin films were produced by means of evaporation with cwCO2 laser as a heating agent. Electrical resistivity and light transmittance of deposited carbon films were measured and it was found that the properties of the deposited films were strongly dependent on the parent materials, i.e. a graphite-like film was obtained from powdered graphite and a diamond-like films from powdered diamond. The evaporation modes were also investigated with a quadrapole mass spectrometer.View full abstractDownload PDF (2398K) -
Yasuro ATO1980 Volume 23 Issue 7 Pages 339-345
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSSputtering yields of Cu- and Au-films for bombardment by 40 keV Ar and O2 ions have been measured using Ruterford backscattering of 180 keV He ions. In cases of both Ar ion on Cu-films and Ar and O2 ions on Au-films, the dose dependence of sputtering yields is obtained in the range of about 100Å depth from the film surface, where sputtering yields are found to be nearly independent of these ion doses In the case of 02 ions on Cu-films, the sputtering yield decreases with the O2 ion dose. This reduction is most likely caused by the formation of Cu2O. The dependence of sputtering yields on incident angle is also obtained for Ar ions on Cu and for O2 ions on Au. Results are compared with theoretical predictions.View full abstractDownload PDF (1030K) -
Tadayoshi Honda, Ikuro Kobayashi1980 Volume 23 Issue 7 Pages 346-352
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSAn Electron Microprobe Auger Spectroscopy was applied to investigate interactions between Al film and thermally grown silicon dioxide (SiO2) in order to examine the failure occurred for very thin Al film on SiO2 surface during heating and stressing tests. It was found that the oxidation mechanism of Al film was different on Al film surface from that at the interface between Al and SiO2 during heating in vacuum at 400-500°C for 30 min. Also, the depth of penetration of Al into SiO2 was found to be unexpectedly large. As a result of stressing test, chained hillocks appeared along the direction of electron flow in the case of very thin Al film. This Phenomenon may be due to diffusion of Si into Al film by heating during device process.View full abstractDownload PDF (3997K) -
[in Japanese]1980 Volume 23 Issue 7 Pages 353
Published: July 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESS
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