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Volume 34, Issue 4
Displaying 1-9 of 9 articles from this issue
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Moriaki FUYAMA, Masanobu HANAZONO, Mitsuru URA, Haruhiko HONDA1991 Volume 34 Issue 4 Pages 405-412
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAn optimun deposition condition of HfC- (Hf·Ti) C-TiC triple layered fillm on cemented carbide tools by medium size chemical vapor deposition (CVD) apparatus was obtained, and wear resistance and wear mode of the triple layered film were investigated.
As a result, adhesive triple layered films were obtained by supplying source gases (I2, C4H10) under the following conditions; the source gas ratio of C4H10/I2 was maintained at 1011, the same value obtained in the experimental CVD appartus, and the source flow rate was set at four times as large as that of the experimental CVD apparatus.
Wear resistance of triple coated tools was found to be better than TiC coated tools. The role of each film was as follows; HfC film improved the crater wear, end flank wear and mean flank wear, and TiC film impeoved the lateral grooving flank wear. (Hf·Ti) C film was inserted to improved adherence between HfC and TiC.View full abstractDownload PDF (2296K) -
Keiji OYOSHI, Takashi TAGAMI, Ken YAMASHITA, Shuhei TANAKA1991 Volume 34 Issue 4 Pages 413-419
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSPSG layers were prepared by P+ ion implantation in silica, Na2O-SiO2, and Na2O-CaO-SiO2 glasses. The chemical state of the implanted P was evaluated by X-Ray photoelectron spectroscopy. In the silica glass, a part of the implanted P reacts with O. The remaining P are, however, oxidized by subsequent O+ implantation.
Enhancement of the Na-gettering effect by the PSG layer in the additionally implanted O+ is observed by secondary ion mass spectrometry. In Na2O-SiO2 and NaO2-Ca0-SiO2 glasses, the oxidation of P depends on the glass composition and dose of P+ ions. In Na2O-SiO2 glasses, the number of oxidized P increased with an increase in the molecular ratio of Na2O/SiO2.
Substitution of CaO for Na2O or SiO2 suppresses oxidization of the implanted P compared with the Na2O-SiO2 glass. The dependence of the oxidization of implanted P on the glass composition is discussed from the standpoint of surface-alkali depletion by ion implantation.View full abstractDownload PDF (796K) -
Kohsei ONOE, Kazuya SAITOH, Sakae INAYOSHI, Sonoko TSUKAHARA1991 Volume 34 Issue 4 Pages 420-426
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSHydrogen evolution from Ti-N films and stainless steels (SUS 304) was investigated as a function of temperature. The films were deposited by the HCD-ARE method (activated reactive evaporation using hollow cathode discharge) onto the stainless steel at a substrate temperature of 770 K and negative substrate biases of Vs= -20, -50, -100 and -200 V. The films were found to be effective as outagassing barriers for hydrogen contained in the substrate material.
Cross-sectional observation by transmission electron microscopy revealed the microstructure of the films. The mor-phologies varied with the substrate biases : Coarse grains, 1, 000 to 2, 000 Å in size, were observed in the film deposited at Vs = -20 V. Columnar grain structures with a high density of defects were produced at Vs =-50 V. Fine grains of 50 to 100Å were produced at Vs=-200 V. The effect of the Ti-N films as outgassing barriers was discussed in terms of their morphologies.View full abstractDownload PDF (1230K) -
Mitsuo. SHIMOZUMA, Jin. MURAKAMI, Gen. TOCHITANI, Takashi. TSUJI, Hiro ...1991 Volume 34 Issue 4 Pages 427-431
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThis paper reports that the deposition rate of silicon nitride film deposited with the 50 Hz-plasma CVD method can be improved by using double plasmas. The maximum value of the deposition rate of the obtained film was about 400 Å/min. The characteristics of the silicon nitride films deposited by the double-plasma CVD without a substrate heater were as follows. The refractive index was 2.0, and resistivity and breakdown field strength were about 1015 Ω cm and above 106 V /cm, respectively. Using the double-plasma CVD method, silicon nitride films can be deposited rapidly without problems such as excessive ion bombardment and film breakdown. Moreover, the mechanism of the deposition of highquality silicon nitride and that of the high deposition rate using double-plasma CVD were discussed on the basis of the experimentally observed N2* optical emission intensity from the double plasma as a function of position on the discharge axis.View full abstractDownload PDF (641K) -
Akira OZAWA, Masatoshi ODA, Hideo YOSHIHARA1991 Volume 34 Issue 4 Pages 432-438
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe reactive ion etching of tantalum is investigated with CBrF3 gas plasma. The undercutting strongly depends on the gas pressure, and large undercutting is observed in a high-pressure region. To minimize undercutting, we have studied the effects of carbon atoms including polymerization gas. Undercutting decreases with an increase of carbon in the etching gas. A 0.15μm-wide tantalum pattern with a vertical sidewall is obtained by adjusting the carbon content. The formation of a tantalum pattern is simulated using the Monte Carlo method, taking into account the adsorption effects of polymerization gas.View full abstractDownload PDF (1283K) -
Izumi KATAOKA, Toshihiro YONEMITSU1991 Volume 34 Issue 4 Pages 439-446
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe relation between the surface roughness and the ordering factor of amorphous SiO2 and Ni films fabricated by dual ion beam sputtering was investigated as a function of the assisting Ar+ ion energy. The ordering factor was defined as a quantity which shows the degree of disorder from the rmsvalue of the correlation function of the RHEED pattern from those films.
The surface roughness and the ordering factor of amorphous SiO2 showed minimum values for assisting Ar+ ion energy, and those values were similar.
For amorphous Ni films, the ordering factor also showed the minimum, but the aforementioned similar relation was not observed, because it traced the surface roughness of the substrate in the energy region investigated.View full abstractDownload PDF (1234K) -
Hiroshi ADACHI, Cao Han-Ging, Keiji YADA1991 Volume 34 Issue 4 Pages 447-451
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSZrO/W (100) thermal-field-emission-type cathodes were fabricated by cutting a tungsten sheet of high purity at 45° toward the rolling direction. The apexes of the tips were conformed by being oriented to a (100) direction, and the work function of the (100) surface was selectively lowered by coadsorption of zirconium and oxygen. The themal field emission was very stable, and the emission current fluctuation was less than 3%.View full abstractDownload PDF (717K) -
Masao HIRASAKA, Kenji NAKATANI, Hiroshi OKANIWA, Tetsurou MIKI1991 Volume 34 Issue 4 Pages 452-457
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSPreparation and structure of B-doped microcrystalline hydrogenated silicon (Si : H) films produced by a glow-discharge decomposition method were studied at a low substrate temperature (120°C). The microcrystallization was confirmed to occur at 2% of SiH4 gas diluted by H2 and 200 W of the rf power of glow discharge. The Raman specta of Si : H films showed that the structure of microcrystals had a tensile stress. The tensile stress increased with increasing in SiH2 concentration in Si : H films. It was considered that divalent silicon atoms existed as defects in the Si : H films. Analysis of B in Si : H films by a secondary ion mass spectrometer (SIMS) showed that the concentration of B doped in microcrystalline Si : H films was lower than that in amorphous films.View full abstractDownload PDF (875K) -
[in Japanese]1991 Volume 34 Issue 4 Pages 461-463
Published: April 20, 1991
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (649K)
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