Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 21, Issue 1
Displaying 1-3 of 3 articles from this issue
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  • Vacuum Application to Foods and Agricultural Products
    Kunio USHIZAKA
    1978 Volume 21 Issue 1 Pages 3-8
    Published: January 20, 1978
    Released on J-STAGE: January 22, 2010
    DOIhttps://doi.org/10.3131/jvsj.21.3
    JOURNAL FREE ACCESS
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  • Deposition Conditions and Some Properties of Ion-Plated Aluminum Coatings
    Eiji TSUNASAWA, Kenichiro INAGAKI, Kyuhiko YAMANAKA
    1978 Volume 21 Issue 1 Pages 9-16
    Published: January 20, 1978
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.21.9
    JOURNAL FREE ACCESS
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    Aluminum films of 1-20 μm in thickness were ion-plated on steel substrates under various plating conditions using a diode system with electron beam heating of source materials.
    Graphite hearth liner mounted on water cooled copper crucible for melting of aluminum source material was particularly useful for producing thick aluminum coatings.
    Ion-plated aluminum films at process pressure above 5 × 10-3 Torr showed considerable amounts of preferred orientation in (200) plane. The decrease of porosity resulted in a increase in film thickness and any pin-holes were not detected in films of approximately 20 μm in thickness. The ion-plated aluminum coatings above 3μm in thickness required the spray time in excess of 48 hours for rust starting in salt spray testing and thus the satisfactory corrosion resistance was confirmed. The ion-plated aluminum coatings showed far more excellent adhesion to the steel substrates than the coatings obtained by conventional vacuum vapor deposition.
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  • The Solid Ion Source by the Electron Bombardment
    Kintaro MORI, Hifumi TAMURA
    1978 Volume 21 Issue 1 Pages 17-21
    Published: January 20, 1978
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.21.17
    JOURNAL FREE ACCESS
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    The authors developed a low cost and compact ion source for the extraction of solid ions from a solid material, using a grounded cathode Pierce horizontal type electron gun.
    As regards the characteristics of the ion source, the Al ion current was about 10 mA, when the primary electron beam current was 200 mA.
    Boron ions were implanted into a Si wafer using electrostatic deflectors. Density of the boron ion current on the substrate, which was 20 cm away from the crucible, was at 100 μA/cm2 and the total amount of boron implanted on the surface of the Si wafer was 1015 atoms/cm2, when the ion implanting energy was 20 keV.
    The authors analyzed the boron film deposited with ion beam plating on a substrate of Ta, when the ion energy was 20 keV. The mass spectrum in an ion microprobe analyzer showed that contaminations, except for C, N and O, were about 1/1000 of the concentration of boron.
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