All issues
Volume 40, Issue 4
Displaying 1-7 of 7 articles from this issue
- |<
- <
- 1
- >
- >|
-
Yoshitsugu TSUTSUMI, Masato IKEGAWA, Tatehiko USUI, Yoko ICHIKAWA, Kaz ...1997 Volume 40 Issue 4 Pages 353-359
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSTo understand the chemical vapor deposition (CVD) reaction mechanism of the formation of a thin film in a gas phase, it is important to identify the intermediate chemically active species (radicals) for each reaction. Radicals gener-ally have a very short lifetime, therefore, they are very difficult to detect. Molecular beam sampling (MBS) is a method that can extract radicals in the gas phase using free jet expansion. An MBS system was designed to analyze the CVD reaction mechanism in the gas phase near the surface of the wafer. The system consists of a thermal flow-through CVD reactor and three differential pumping vacuum chambers with a quadrupole mass analyzer (QMA). The system was ap-plied to detect radicals produced in the region near the wafer in a thermal TEOS/O3 (tetra-ethyl-orthosilicate) CVD reaction of SiO2 thin film deposition. It was proved that the radicals, from which ethoxy bases of TEOS are extracted, are formed in the gas phase and play an important role in the CVD reaction.View full abstractDownload PDF (825K) -
Yoshifumi ITO, Susumu KAMIKAWA, Mitsuo KATO, Etsuro HIRAI1997 Volume 40 Issue 4 Pages 360-364
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAn oblong crucible is heated with a high frequency alternative current of about 1kHz using an induction heating coil. This frequency is adopted to make it possible to raise the center of the molten aluminum by electromagnetic force to re-move the impurities of aluminum oxide or aluminum carbide from the aluminum surface. Thus, the aluminum surface is clean for a long time.View full abstractDownload PDF (621K) -
Ji SHI, Yuji HASHIBA, Yumiko HAGA, Osamu NITTONO1997 Volume 40 Issue 4 Pages 365-371
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSNi-C composite films were prepared by codeposition using a combined technique of plasma CVD and ion beam sput-tering deposition. The structure of these films was characterized by in-situ energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, Ni3C (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low HC4 flow rates. The thermal stability of this nonequilibrium carbide Ni3C was also studied. As a result, the Ni3C carbide was found to decompose into nickel and graphite at around 400°C. With high HC4 flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.View full abstractDownload PDF (1410K) -
Hideo OKAYAMA, Nagayoshi KONISHI, Takanobu MIMURA, Akiyoshi NAGATA, Hi ...1997 Volume 40 Issue 4 Pages 372-376
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThin films of yttria stabilized zirconia (YSZ) for solid oxide fuel cells (SOFCs) were prepared in reduced pressures from 1.3 to 6.7 Pa and substrate temperatures from room temperature to 500°C on Si (100) substrate by RF magnetron sputtering. Sputtered films were found to be zirconia films orientated from the tetragonal (101) to tetragonal (111) phases and grown in a columnar structure, with increased substrate temperature and deposition pressure. Furthermore, when the film was annealed at 1000°C, zirconia with a tetragonal phase was also found to transit YSZ with a cubic phase.View full abstractDownload PDF (1023K) -
Yutaka TUZI, Tomonari TANAKA, Kyoko TAKEUCHI, Yoshio SAITO1997 Volume 40 Issue 4 Pages 377-385
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSAdsorption and desorption kinetics of gases in a vacuum chamber can be characterized by the sticking probability, s, the mean sojourn time, τ, and the amount, σ, of adsorption. Among them, s can be determined through analysis of the pressure change which is induced in the chamber by a pressure pulse of very short duration. In the present study, the pulse was generated by pulsed-laser-beam irradiation of water condensed on a cold surface. On a stainless steel chamber surface treated by glass bead blasting, s for as received conditions was about 9×10-4, and increased gradually to 0.04 after repeated introduction of atmospheric air and degassing at 250°C. On an electropolished stainless steel surface, s was about 0.01 during pumping at room temperature, and increased to about 0.1 upon degassing at 250°C. On a stainless steel chamber surface coated with TiN, s increased by 0.04 to 0.2 during pumping at room temperature. The temperature dependence of s was measured on the above three surfaces after they had been thoroughly degassed. Changes in s on these surfaces caused by exposure to humid nitrogen or air were also observed. The results are compared with the results of micro-calorimetric measurements of the heat of adsorption for water vapor on various oxides. Finally, a schematic representation of the adsorption and desorption processes of water vapor on a stainless steel surface is proposed.View full abstractDownload PDF (1328K) -
Yutaka TUZI1997 Volume 40 Issue 4 Pages 386-389
Published: April 20, 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (642K) -
1997 Volume 40 Issue 4 Pages 421
Published: 1997
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (128K)
- |<
- <
- 1
- >
- >|