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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 28, Issue 7
Displaying 1-5 of 5 articles from this issue
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  • Chemistry of Electronics Gas
    Tsuyoshi TAKAICHI
    1985 Volume 28 Issue 7 Pages 553-562
    Published: July 20, 1985
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.28.553
    JOURNAL FREE ACCESS
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  • Radiative Processes in CdS Fine Particles
    Takehito YOSHIDA, Tsutomu OGAWA, Toshihiro ARAI
    1985 Volume 28 Issue 7 Pages 563-574
    Published: July 20, 1985
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.28.563
    JOURNAL FREE ACCESS
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  • Some Physical Differences between Sheet Plasma and Multicusp Plasma as Volume Produced H- or D- Ion Sources
    Joshin URAMOTO
    1985 Volume 28 Issue 7 Pages 575-580
    Published: July 20, 1985
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.28.575
    JOURNAL FREE ACCESS
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    In the H- ion volume production by means of a sheet plasma, the extracted H- ion current increases towards the outside across the magnetic field. This fact means that H- ions are produced outside of the sheet plasma, and is in contrast with the fact that H- ions in the multicusp plasma are produced almost in the center region without magnetic field. Furthermore, in the optimum conditionn for extracting H- ions from the sheet plasma, the potential of the first extraction electrode is biased more negatively than that of the discharge anode or the plasma potential, while, in the optimum condition for the multicusp plasma, it is biased more positively. These physical differences between the two plasmas are related with confinement regions of electrons and ambipolar diffusions of plasma without magnetic field or across magnetic field.
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  • c-BN Films Obtained by Ionized Deposition
    Peng Fei ZHOU, Toshio MORI, Yoshikatsu NAMBA
    1985 Volume 28 Issue 7 Pages 581-586
    Published: July 20, 1985
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.28.581
    JOURNAL FREE ACCESS
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    Cubic boron nitride (c-BN) films have been prepared by ionized deposition from evaporated boron and nitrogen gas at a pressure of 10-1 Pa. The film structures were examined by transmission electron microscopy and electeon diffraction. It was found that the structure of BN films could be classified into the following types : amorphous, hexagonal, cubic, and their mixtures. The average grain size of c-BN films was estimated to be less than few thousand angstroms. These structures and grain sizes depended mainly on the deposition conditions such as substrate potential, temperature, and ion current density.
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  • Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy
    Tamotsu HASHIZUME, Ryuichi KATSUMI, Hideo OHNO, Hideki HASEGAWA
    1985 Volume 28 Issue 7 Pages 587-595
    Published: July 20, 1985
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.28.587
    JOURNAL FREE ACCESS
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    Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014-3.3×1015cm-3, is reduced by a factor 10-50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.
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