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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 32, Issue 11
Displaying 1-7 of 7 articles from this issue
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  • Analysis of Neutral Gas Molecules, Ions and Solid Particles in Space
    Results of Comet Halley's Exploration
    Jun OKANO
    1989 Volume 32 Issue 11 Pages 783-790
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.783
    JOURNAL FREE ACCESS
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  • Single Crystal Growth of Silicon Carbide (SiC) and Its Application
    Hiroyuki MATSUNAMI
    1989 Volume 32 Issue 11 Pages 791-796
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.791
    JOURNAL FREE ACCESS
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  • Fabrication Techniques and Electro-optical Properties of 4H-SiC Bluish-purple LEDs
    Toshitake NAKATA, Yasuhiko MATSUSITA, Kazuyuki KOGA, Yasuhiro UEDA, Ta ...
    1989 Volume 32 Issue 11 Pages 797-800
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.797
    JOURNAL FREE ACCESS
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    SiC bluish-purple light emitting diodes have been fabricated using a 4H-type off-angle SiC single-crystal substrate by the LPE method.
    Aluminum and nitrogen were used as acceptors and donnors, respectively. Aluminum was also added to n-type layers to produce D-A pair phosphors.
    Diffusion potential was 2.7 V which was 0.2 V larger than that of 6H-SiC blue LED. Brightness was 1 mcd at a forward current of 25 mA. Peak wavelength was 420 nm, and light output was 2 μW at 25 mA. Dependence of light output on large-pulse forward current (about 0.21.5 A) is also described.
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  • Reactive Ion Etching of III-V Compound Semiconductors using Mixture of Ethane and Hydrogen
    Teruhito MATSUI, Hiroshi SUGIMOTO, Toshiyuki OHISHI, Ken-ichi OHTSUKA
    1989 Volume 32 Issue 11 Pages 801-807
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.801
    JOURNAL FREE ACCESS
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    Mixtures of ethane and hydrogen are used as etching gas in order to etch InP, InGaAs and GaAs in reactive ion etching. Smooth surfaces and excellent vertical sidewalls have been obtained by choosing the optimum etching parameters. Etch rates obtained are 72 nm/min for InP, 32 nm/min for InGaAs and 20 nm/min for GaAs, respectively. The etch rates are found to be independent of the etching time.
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  • XPS Studies of Bi-Sr-Ca-Cu-O Films by a rf Magnetron Sputtering Method
    Satoru KISHIDA, Heizo TOKUTAKA, Yoshio NOISHIKI, Hideaki HIGASHI, Kats ...
    1989 Volume 32 Issue 11 Pages 808-811
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.808
    JOURNAL FREE ACCESS
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    The Bi-Sr-Ca-Cu-O thin films were prepared by a rf magnetron sputtering method. By carrying out the XPS (X-ray photoelectron spectroscopy) measurements, we investigated the effects of the substrate temperatures during the preparation and the post-annealing on the compositions of the films. It is clear that relative Cu, Bi and O XPS intensities change with increasing the substrate temperatures. After the post-annealing, the differences of the compositions of the films could not be observed among the substrate temperatures where the films were made.
    In the O-ls XPS spectra of the as-deposited specimen, peaks at 530 and 532 eV were observed. The positions of the peaks are approximately equal to those of the post-annealed specimen. However, the peak at lower energy side was dominant in the post-annealed specimen, while the peak at higher energy side was dominant in the as-deposited specimen.
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  • A Study of Oxygen Adsorption on the Titanium Surface by Means of T-O-F spectroscopy for Electron Stimulated Desorption
    Kazuyuki UEDA, Akemi TAKANO
    1989 Volume 32 Issue 11 Pages 812-816
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.812
    JOURNAL FREE ACCESS
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    Dynamical adsorption processes of oxygen on the titanium surface were observed by means of Time-of-flight spectroscopy for the electron stimulated desorption. An energy distribution curve and signal intensity which depend strongly on the surface treatment were obtained for desorbed oxygen ions from titanium surface. Desorbed oxygen ions have two peaks at about 2 eV and 4 eV in the kinetic energy distribution curves. it is considered that the former came from a dissociated oxytgen on the surface and the latter from molecularly adsorbed oxygen (non-dissociated).
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  • Cryogenic Growth of Polysilane
    Masataka HIROSE, Seiichi MIYAZAKI, Hidetoshi SHIN
    1989 Volume 32 Issue 11 Pages 817-821
    Published: November 20, 1989
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.32.817
    JOURNAL FREE ACCESS
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    Polysilane like films with an optical bandgap of more than 3.0 eV have been prepared on a cooled substrate held at about -100°C by the rf glow discharge decomposition of 3% SiH4 diluted with H2. The infrared absorption spectra indicate that a number of SiH3 units and polysilane (SiH2)n chains are incorporated in the matrix. Predominant incorporation of SiH3 unit in the film indicates that the deposition precursor is SiH3 created in the SiH4 + H2 plasma. Furthermore, the surface oxidized layer formed in air at room temperature is composed of SiO and Si2O units, strongly suggesting the local oxidation of the polysilane chain.
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