Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 48, Issue 8
Displaying 1-6 of 6 articles from this issue
Special Issue: Physics and Applications of Slow Highly Charged Ions— Forefront of Ion Beam Technology 1
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  • Yoshihiro MIYAUCHI, Haruyuki SANO, Goro MIZUTANI
    2005 Volume 48 Issue 8 Pages 489-491
    Published: 2005
    Released on J-STAGE: August 11, 2006
    JOURNAL FREE ACCESS
    We have observed SH intensity images of the hydrogen terminated Si(111) surface partly irradiated by UV light (hω=3.5 eV) in ultra-high vacuum using a SH microscope. The SH signal intensity of the surface covered with hydrogen was weak. Hydrogen desorption due to the UV light irradiation caused the enhancement of SH intensity. The observed SH intensity images of the H-Si(111) surface represent the spatial distribution of the surface electronic states created by the hydrogen deficiency. We have also investigated dependence on the UV light power of the hydrogen desorption from H-Si(111) surface using the SH microscope. These experimental results suggest that the observed hydrogen desorption results from the laser induced thermal desorption (LITD).
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