Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Search
Advanced search
OR
Browse
Search
Volume 23, Issue 1
Displaying 1-5 of 5 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
  • Thermal Negative Ion Sources I.
    Principle, Surface Materials, and Operating Conditions
    Hiroyuki KAWANO
    1980 Volume 23 Issue 1 Pages 1-11
    Published: January 20, 1980
    Released on J-STAGE: January 22, 2010
    DOIhttps://doi.org/10.3131/jvsj.23.1
    JOURNAL FREE ACCESS
    Download PDF (1573K)
  • CA (Closed Anode) Bias Sputtering and its Application to Ta2N Thin Films
    Tsuneaki UEMA, Eiichirou IMAOKA, Tadayasu FUKATSU, Yasumasa SUGIHARA
    1980 Volume 23 Issue 1 Pages 12-17
    Published: January 20, 1980
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.12
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A CA (Closed Anode) bias sputtering method to bombard the substrate effectively and to widen the current region of the stable sputtering was developed. This region was determined by the floating potential of the substrate holder. The lower limit of sputtering current for the stable sputtering was advanced to 1/2 1/5 times that of usual diode sputtering. The Ta2N films obtained showed a clear plateau and good stability. The films can be used for high reliable resistors.
    View full abstract
    Download PDF (728K)
  • Photovoltaic Effect of the System of Amorphous InxSe1-x-SnO2
    Tatsuhiko MATSUSHITA, Akio SUZUKI, Masahiro OKUDA
    1980 Volume 23 Issue 1 Pages 18-25
    Published: January 20, 1980
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.18
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Electrical and optical properties of the amorphous InxSe1-xfilms with 210 μm thickness have been studied. Photovoltages as a function of wavelength have been studied on the system of Sn2O amorphous InxSei_1-x film (Sb H-Au). For the system of x=0.4, the photovoltage spectra for various annealing temperatures have been investigated. Annealing effect was prominent at 80 °C for 15 minutes and in this case, the conversion efficiency was obtained to be about 0.8%. For the system of x=0.2, in order to improve the conversion efficiency, we have processed films at the temperature range from 50°C to 120°C under illumination. The maximum efficitncy about 2.8% was obtained at the measurement temperature 105°C. A tentative band model for a consistent explanation of the experimental data is proposed for both cases.
    View full abstract
    Download PDF (1300K)
  • Kinetics and Mechanism of Formation of Oxide Films on GaAs by Anodization in High-Frequency Oxygen Plasma
    Kimiyoshi YAMASAKI, Takuo SUGANO
    1980 Volume 23 Issue 1 Pages 26-34
    Published: January 20, 1980
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.26
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Oxide films on GaAs have been formed by anodization in oxygen plasma produced by high-frequency (420 kHz) electrodeless discharge in oxygen with a pressure of 13-40 Pa. The oxide growth rate is limited by ion drift from the interface between the oxide and the GaAs substrate to the oxide surface under a high electric field in the oxide (Eox) of 2-3 ×106 V/cm. The ionic is represented by the equation as Ii=Iiotransport exp [q (Wi+ZbEox) / kT], where +0.5 eV and Zb=44±16 Å. The current efficiency, defined by the ratio of the ionic current in the oxide to the total current, is independent of oxidation time and current density, but it increases from 17% to 47% with GaAs chip temperature (80-330°C). The current efficiency is dependent on plasma condition, such as, ion density and electron energy, too.
    View full abstract
    Download PDF (1373K)
  • Deposition of Molybdenum Silicide Film by Reactive Sputtering
    Toshihiko FUKUYAMA, Shintaro YANAGISAWA
    1980 Volume 23 Issue 1 Pages 35-41
    Published: January 20, 1980
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.35
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Recently, metal silicides have been noticed as a gate and an interconnection for the fabrication of high performances MOS devices. In this paper, a new method of depositing molybdenum suicide films is presented, in which the films are deposited by the reactive sputtering of a Mo target in a mixture of argon and silane. Using a mass spectrometer, it was confirmed that most of the silane was decomposed by applying a sputtering power above 0.6 kW. The crystal structure and chemical composition of the films have been determined by X-ray diffraction and an Auger electron spectrometer, respectively. It was found that the Si/Mo atomic ratio of the deposited films could change in the range 0.026 to 1.9 by controlling the silane partial pressure and the sputtering power. It was possible to obtain the Mo3Si, Mo5Si3 and MoSi2 structures by this method. On increasing Si/Mo atomic ratio in the ranee 0.026 to 1.9. the electrical resistivity of the films increase gradually.
    View full abstract
    Download PDF (772K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top