Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 10, Issue 11
Displaying 1-4 of 4 articles from this issue
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  • Heat Transfer under Vacuum
    Tsuyoshi MUNAKATA
    1967 Volume 10 Issue 11 Pages 377-387
    Published: November 20, 1967
    Released on J-STAGE: January 28, 2010
    DOIhttps://doi.org/10.3131/jvsj.10.377
    JOURNAL FREE ACCESS
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  • Seals for Vacuums
    Masaharu KOBAYASHI
    1967 Volume 10 Issue 11 Pages 388-394
    Published: November 20, 1967
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.10.388
    JOURNAL FREE ACCESS
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  • Properties of Vapour Grown Silicon Nitride Films
    Taro OKABE, Kazuo MAEDA, Motoo NAKANO, Junji SATO
    1967 Volume 10 Issue 11 Pages 395-403
    Published: November 20, 1967
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.10.395
    JOURNAL FREE ACCESS
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    Properties of silicon nitride films grown on silicon single crystals were investigated. Films were grown by vapour phase reaction of SiH4-NH3-H2 system. As a function of substrate temperature and mixing ratio of NH3 and SiH4, film growth rate, etching rate, infrared absorption spectrum, refractive index, dielectric constant, I-V characteristics, and C-V characteristics were measured.
    It was observed that at the elevated substrate temperature refractive index and dielectric constant increased while break down voltage, etching rate and stability for applied electric field decreased. The mixing ratio did not change the properties of film when it was larger than 5, but when the mixing ratio became smaller, it affected those in the same way as increasing temperature.
    These results suggest the fact that the properties of silicon nitride films mainly depend upon the quantities of excess silicon atoms contained in them.
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  • Photoconduction of CdS Thin Films
    Kazuhiko IHAYA
    1967 Volume 10 Issue 11 Pages 404-410
    Published: November 20, 1967
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.10.404
    JOURNAL FREE ACCESS
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    Optical and electrical properties of evaporated CdS films as a function of film thickness were investigated in the ultra-violet and visible region. After CdS was deposited on a quartz plate maintained at 80°C, optical transmission, reflection and photocurrent were measured in situ at room temperature. Curves of absorption, resistivity and efficiency of photoconduction as a function of film thickness always show a critical point near the film thickness of 120 mμ. It can be explained if one assumes that in films thinner than 120 mμ deviation from stoichiometry is remarkable, and that in thicker films, deviation from stoichiometry becomes nearly constant, but crystallinity greatly changes. Band gaps of thinner films calculated from the absorption coefficient show greater values than those of bulk materials. Curves of spectral sensitivities of thinner films have peaks in the ultra-violet region, which move towards longer wavelength when the film thickness increases, and coincide with those of bulk materials at the film thickness of 500mμ It can be attributedmainly to the dependence of the band gap on the film thickness.
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