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Volume 18, Issue 2
Displaying 1-2 of 2 articles from this issue
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Seiichi NAGASHIMA, Masanori MURAKAMI, Didier de Fontaine, Iwao OGURA1975 Volume 18 Issue 2 Pages 39-44
Published: February 20, 1975
Released on J-STAGE: October 14, 2009
JOURNAL FREE ACCESSThe epitaxial temperature of Cu films evaporated on a mica substrate has been studied using a conventional x-ray diffraction method. The epitaxial temperature determined by (111) integrated intensities was in the vicinity of 170°C. This result has been confirmed using the back-Laue method. The effect of annealing polycrystalline Cu films evaporated on a substrate kept below the epitaxial temperature has also been investigated by the x-ray diffraction method. By the changes in the (111) integrated intensities of Cu films annealed at higher temperatures a value of approximately 0.19eV was obtained as the activation energy of grain growth during the initial stages of the growth process.View full abstractDownload PDF (921K) -
Toru KANAJI, Jun-ichi MAMEDA, Takami KAGOTANI, Sabura NAGATA1975 Volume 18 Issue 2 Pages 45-53
Published: February 20, 1975
Released on J-STAGE: January 27, 2010
JOURNAL FREE ACCESSIron atoms were deposited on a carefully cleaned MgO (001) surface kept at room temperature, and growth mode of epitaxial film was studied by a conventional four-grid LEED-AES system. Deposition rate was about one angstrom per minute and residual gas pressure during the deposition was 5-6 × 10-9 Torr. Change rates of Auger peak-to-peak heights of substrate and deposit during the film formation were not similar. From these curves and some additional evidences, it seemed that the film grew up through the “Stranski-Krastanov mode”.View full abstractDownload PDF (1443K)
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