Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 35, Issue 4
Displaying 1-7 of 7 articles from this issue
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  • Preparation of B-N-C Films by Reactive Sputtering of Graphite/Boron Carbide Composite Target
    Kaoru SHIBATA, Hisayoshi YOSHIDA
    1992 Volume 35 Issue 4 Pages 411-416
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.411
    JOURNAL FREE ACCESS
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    B-N-C films were prepared by reactive sputtering of a graphite/boron carbide composite target in N2 atmosphere. The films prepared with various deposition parameters, such as position of the substrate, sputtering pressure, and N2 partial pressure of the sputtering gas, were studied using X-ray photoelectron spectroscopy and IR transmission spectroscopy. The carbon concentration of the films decreased with decreasing N2 partial pressure, while boron concentration increased with decreasing N2 partial pressure. By contrast, nitrogen and oxygen concentrations of the films were independent of N2 partial pressure. Based on the binding energies of 1s electrons for C, B, and N and IR spectra, the chemical bonds were discussed, and the formation of B-N and C-N bonds was confirmed.
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  • Control of Perpendicular Magnetic Anisotropy through Unevenness of Suputter-Etched Polyimide Base Films
    Nobuyuki HIRATSUKA, Tomohiro SAITSU, Tomonori ICHIKAWA, Minoru FUJITA
    1992 Volume 35 Issue 4 Pages 417-421
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.417
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    Fine uneveness of a polyimide (PI) film was controlled by the sputter-etching method. When the PI films were etched under an output power of less than 20 Wh, homogeneously distributed two-dimensional projections were formed. The surface of the PI films became rough under an output power of more than 20 Wh.
    CoOx films with perpendicular magnetic anisotropy were fabricated by means of facing-target-type sputtering on the etched PI base films.
    CoOx film with a cylindrical columnar structure was deposited on the PI film etched in the range of low output power. The grain conformation of CoOx films become ellipsoidal when the PI films was etched under a higher output power.
    CoOx film deposited on an as-received PI film had the Ku value of 1.3 × 105 J/m3. The value of Ku of CoOx film increased to the maximum value, 3.3 × 105 J /m3, when the PI base film was sputteretched under an output power of 5 Wh.
    The, unevenness of the PI substrate film allowed the formation of the columnar structure and the perpendicular magnetic anisotropy of CoOx films.
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  • Ion Spectroscopy Gauge for XHV Pressure Measurements Down to 10-12Pa without Errors Due to ESD Ions
    Fumio WATANABE
    1992 Volume 35 Issue 4 Pages 422-430
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.422
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    A new hot-cathode ionization pressure gauge, called an ion spectroscopy gauge, which avoids errors due to electron-stimulated desorption (ESD) ions down to 10-12 Pa has been developed. The elimination of ESD ion errors is accomplished by combining three technical elements, a spherical grid ion-source, a spherical 180° energy analyzer, and reduction of desorption from a hot-cathode gauge. The X-ray limit of the new gauge is below 1.3×10-12 Pa with a sensitivity of 3×10-4 (A/Pa). Performance measurements of the new gauge have been carried out in a new aluminum XHV system and confirmed down to 2×10-11 Pa.
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  • Ion Accelerator Linked to the Electron Microscope
    Tetuo TSUKAMOTO, Kiiti HOJOU, Sigemi FURUNO, Hitosi OTSU, Kazuhiko IZU ...
    1992 Volume 35 Issue 4 Pages 431-437
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.431
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    A system of in-situ observation during ion irradiation and implantation was constructed by combining a 100 kV electron microscope with a 10 kV ion irradiation equipment. The equipment was designed to obtain a strong ion beam by using a duoplasmatron-type ion gun, an accelerator, two lenses and a selecting magnet. Inside the specimen chamber of the electron microscope, the beam was deflected downwards by an angle of 72° by an electrostatic prism and implanted into the surface of specimen. The ion current density attainable at the specimen position was about 1 A/m2 for the case of 10 kV helium ions, which corresponds to the flux of about of 6×1018ions/m2 s. By using this system, we have succeeded in observing, for the first time, the dynamic processes of bubble growth, coalescence and burst occurring repeatedly in a specimen.
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  • Development of Extreme High Vacuum by Using Open Pumping System with Dual Diffusion Pumps in Tandem and Titanium Sublimation Pump
    Daisuke FUJITA, Teiichi HOMMA, Shojiro TAKAHASHI
    1992 Volume 35 Issue 4 Pages 438-441
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.438
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  • [title in Japanese]
    [in Japanese]
    1992 Volume 35 Issue 4 Pages 442-444
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.442
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  • [title in Japanese]
    [in Japanese]
    1992 Volume 35 Issue 4 Pages 445-450
    Published: April 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.445
    JOURNAL FREE ACCESS
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