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Volume 26, Issue 10
Displaying 1-5 of 5 articles from this issue
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Takashi MISHIBA1983 Volume 26 Issue 10 Pages 757-769
Published: October 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (3871K) -
Yoichiro NAKANISHI, Hiromichi YAMASHITA, Yoshiko SUZUKI, Goro SHIMAOKA1983 Volume 26 Issue 10 Pages 770-777
Published: October 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe structure and morphology of evaporated ZnS films on polished Si (111) and epitaxial Si (111) substrates have been studied by electron microscopy and reflection high energy electron diffraction (RHEED). Epitaxial ZnS films were obtained at a substrate temperature of 200°C. All ZnS epitaxial films evaporated at substrate temperatures ranging from 200 to 300°C contained {111} microtwins. These films had zincblende structure and showed preferential orientation : (111), [110] ZnS// (111), [110] Si. It was found that the crystallinity of ZnS films on the substrate was changed significantly when the substrates were irradiated with electrons immediately before the deposition.View full abstractDownload PDF (2441K) -
Katsuyuki SHOJI, Hiromu UEBA, Chiei TATSUYAMA1983 Volume 26 Issue 10 Pages 778-783
Published: October 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe initial stage of heteroepitaxy and the superstructure of the Ge on Si surface have been investigated by LEED and AES. Germanium was evaporated on the clean Si (111) 7×7 surface up to about 6 monolayers in the ultrahigh vacuum chamber. With increase in Ge coverage on the substrate heated at 350°C, the intensity of the Si (LVV) -AES signal decreased in accordance with a growth mode of the Stranski-Krastanov type, i.e., the first 3 monolayers grow as layer by layer followed by a 3-dimensional island formation, and the LEED pattern showed a (5×5) superstructure at about 2 monolayers Ge coverage. The AES intensity and the LEED pattern drastically changed by annealing. The phase diagram of the superstructure of the Ge on Si (111) system was constructed for the coverage in nomolayers of Ge deposited at room temperature versus annealing temperature.View full abstractDownload PDF (740K) -
Kazuyuki UEDA, Keiji KINOSHITA1983 Volume 26 Issue 10 Pages 784-788
Published: October 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA data processing system for the thermal desorption specturm has been described. This system is constructed of a personal computer with an interface of intelligent type combining with a conventional quadrapole mass analyzer. One spectrum of mass number ranging from 1 to 50 can be obtained in a second with a rapid scanning technique. Besides, measurements of 120 times can be repeated at every other second in a single run. Thermal desorption spectra were demonstrated for two kinds of stainless steel sheets. Hardware and software of the system are also described.View full abstractDownload PDF (572K) -
Coulomb Repulsion Type and Sound Wave TypeEizo MIYAZAKI1983 Volume 26 Issue 10 Pages 789-791
Published: October 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSTwo new type manometers were devised : The first device is an application of electrostatic coulomb repulsion operating between two pieces of metal foils which were set in or out of the system to be measured. The other device is based on the decrease in sound intensity in low pressure. The first type is available for measuring the pressure range from 0.01 to100 Torr. The second one is available in the pressure over 10 Torr.View full abstractDownload PDF (263K)
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