Aiming at extremely high-vacuum (XHV, less than 1 × 10
-8 Pa (7.5 × 10
-11 Torr)) sputter deposition and atomic manipulation, a fast-cycle exhausting system capable of attaining XHV has been developed by assembling a main valve between a main chamber and a side chamber. The main chamber is exhausted by a bakeable cryopump, and the pumping characteristic is measured. Ultimate pressure is attained at less than 8 × 10
-11 Pa (6 × 10
-13 Torr) in the main chamber after 17 hours of baking at about 200°C and evacuation for 60 h, and 1 × 10
-8 Pa (7.5 × 10
-11 Torr) after evacuation for 60 h without any baking. In the actual system operation transferring a substrate from the side chamber to the main chamber, XHV is attained in 3 min, and 1 × 10
-9 Pa (7.5 × 10
-12 Torr) in 90 min. This system is expected to be very effective for thin-film deposition and atomic manipulation.
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