Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 31, Issue 10
Displaying 1-6 of 6 articles from this issue
  • Shigehiko YAMAMOTO
    1988 Volume 31 Issue 10 Pages 833-840
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (1070K)
  • Kiichiro KAMATA, Yoshitaka USUI, Tsutomu YAMAMOTO
    1988 Volume 31 Issue 10 Pages 841-844
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    TiN films have been successfully prepared by plasma CVD using TiI4, NH3 and H2 reaction gases. (111) oriented films with smooth and fine-grained surfaces were obtained at the substrate temperature between 450 and 750°C. On the other hand, non-oriented films with rugged surfaces were obtained at the substrate temperature of 850°C. The deposition rates of these films were 2730 nm/min. The lattice constants of these films decreased from 4.243 to 4.238Å with increasing the flow rate of N2 gas. Micro vickers hardness of the films was confirmed to be 1819 GPa under the optimum experimental conditions in the present study.
    Download PDF (590K)
  • Yasuhiko SUGIYAMA, Masahiko INOUE, Satoshi NISHIGAKI, Tamotsu NODA
    1988 Volume 31 Issue 10 Pages 845-849
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Some features of the Sample Biased Ion Scattering Spectro-Scopy (SBISS) are discussed. In this new technique, the signal intensity and mass resolution is controlled by varying the sample bias potential. It is experimentally shown that the energy spread of the scattered ion is hardly influenced by the bias potential.
    Download PDF (550K)
  • Seiji HIROKI, Tetsuya ABE, Yoshio MURAKAMI, Shoichi KINOSHITA, Takao N ...
    1988 Volume 31 Issue 10 Pages 850-853
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    A bakeout procedure is effective for reducing outgassing of a vacuum chamber. But it is difficult and so long times are needed for the large and complicated chambers such as the recent fusion machines to heat up and down uniformly. So if possible, it is desired not to heat the chamber and to reach our needed outgassing level as fast as possible.
    Recently, new surface cleaning method which simultaneously irradiates ultraviolet ray and ozone to be cleaned surface in room atmosphere is successively used, mainly in a semi-conductor processing. So we examined to turn on a low pressure mercury lamp which mainly emitted 184.9 and 253.6 nm in a vacuum chamber, and investigated these outgassing characteristics. Graphite liners were installed inside of the chamber.
    It was found that the total pressure increased during turning on the lamp, and simultaneously, the outgassing of H2, CO, CO2, CH4, etc also incleased, while H2O and O2 were slightly reduced. Weakly bonded gas molecures on the surface were desorbed by the energy of ultra-violet ray, and particularly, in part of adsorbed H2O molecures were dessociated.
    Download PDF (458K)
  • Tomoyuki OSAKI, Ryosuke KONISHI, Hisamochi HARADA, Hiroshi SASAKURA
    1988 Volume 31 Issue 10 Pages 854-856
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (268K)
  • Hiroshi DAIMON, Shinjiroo UEDA, Yuuichi ISHIKAWA, Hidaki KAMOHARA
    1988 Volume 31 Issue 10 Pages 860-868
    Published: October 20, 1988
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (1302K)
feedback
Top