Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 20, Issue 12
Displaying 1-4 of 4 articles from this issue
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  • Growth of Te Thin Films on the (111) Films of KBr Deposited on Mica
    Seiichi NAGASHIMA, Iwao OGURA
    1977 Volume 20 Issue 12 Pages 406-411
    Published: December 20, 1977
    Released on J-STAGE: May 07, 2010
    DOIhttps://doi.org/10.3131/jvsj.20.406
    JOURNAL FREE ACCESS
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    The growth of Te thin films deposited on thin evaporated films of KBr which were deposited on air-cleaved muscovite mica at residual gas pressures in the about 10-3 Pa range have been studied by transmission electron microscopy and reflection electron diffraction methods. The KBr films on mica at 200-250°C are entirely (111) oriented monocrystals which include some twins. The surfaces of KBr films are not smooth, and consisted of triangle-cone facets, square-plate-like facets and corrugated facet structures. Tellurium deposited on the KBr films has grown with the c-axis parallel to the ‹110› direction on the {100} face of each facets. This mechanism is similar to that of Te deposited on the cleaved KBr (001) surface. The points of intersection of each facets give rise to maximum nucleation densities of Te particles.
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  • Preparation of PbSxSe1-xThin Films by Co-evaporation Method
    Shigeo FUJITA, Hideyuki OZAKI, Tadashi SHIOSAKI, Akira KAWABATA
    1977 Volume 20 Issue 12 Pages 412-418
    Published: December 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.412
    JOURNAL FREE ACCESS
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    PbSxSei1-xalloy thin films have been prepared onto rock salt and PbSxSei_x single crystal substrates by coevaporation method, and their properties have been investigated. By compensating with an independent selenium vapor source and at the appropriate substrate and source temperatures, both n- and p-type epitaxial layers with carrier concentration, 1018 cm-3, have been obtained. PbSxSei1-x alloy compositions of the deposited layers were determined by X-ray diffraction method and found to be dependent on the selenium source temperatures during evaporation. p-n junction diodes have been prepared from n-type PbS0.5Se0.5single crystal substrates and p-type PbSxS1-xepitaxial layers. These diodes show neither good rectification characteristics nor large RA0 products due to leakage current at the present time.
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  • A Vacuum Ultraviolet Photoelectron Spectrometer for the Study of Chemisorption on Metal Single Crystal Surfaces
    Hidetoshi NAMBA, Yoshitada MURATA
    1977 Volume 20 Issue 12 Pages 419-424
    Published: December 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.419
    JOURNAL FREE ACCESS
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    A vacuum ultraviolet photoelectron spectrometer has been constructed for chemisorption studies on metal single crystal surfaces. The spectrometer has been made from a VUV light source with a differential pumping system and a sample chamber under the ultra high vacuum. In this spectrometer, it is possible to measure the VUV photoelectron spectrum, the electron energy loss spectrum and the Auger electron spectrum. Low energy electron diffraction can also be observed under the same conditions. Some results obtained for Ni-Cr single crystal surfaces are described.
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  • Synthetic Deffusion Pump Oil : Neovac SX and Neovac SY
    Tetsuya YAGI, Shintaro KUROIWA
    1977 Volume 20 Issue 12 Pages 425-428
    Published: December 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.425
    JOURNAL FREE ACCESS
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