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Volume 25, Issue 5
Displaying 1-6 of 6 articles from this issue
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Masanori KOMURO1982 Volume 25 Issue 5 Pages 349-358
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1897K) -
Kenji NUMAJIRI, Atsuhito SAWABE, Tadao INUZUKA1982 Volume 25 Issue 5 Pages 359-365
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe structure of LiNbO3 films formed by plasma-assisted deposition (PAD) is described in relation to the surface roughness and epitaxy of the films.
At the substrate temperature of about 20 °C, the films grow with poly-crystalline on MgO and CaF2 cleaved surfaces. The surface roughness is within 200Å, which is nearly equal to the particle size of the films.
By raising the substrate temperature, it is observed that the columnar particles begin to grow epitaxially on the surface of the film.
These particles, however, disappear almost completely if the bias voltage of-600 V is applied to the substrate holder. The surface roughness of the film is estimated to be about 300 Å from SEM photographs. The bias voltage gives no drastic change in epitaxy.View full abstractDownload PDF (1851K) -
Nobuo SAITO, Tomuo YAMAGUCHI1982 Volume 25 Issue 5 Pages 366-371
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe proprties of amorphous SixCyFz alloy thin films are studied, which are prepared by reactive rf sputtering of silicon in CF4 generally used in plasma etching processes, and by co-sputtering of silicon and carbon in CF4.
As a function of the sputtering partial pressure of CF4, and the fractional area of carbon for co-sputtering, optical absorption coefficient, IR transmission spectra and the composition of the films are measured.
The vibrating mode of chemical bond of CF2 and C2F6 are dominant for relatively lower value of CF4 gas pressure. SiC stretching mode becomes predominantly for higher value of CF4 gas pressure and with increasing the fractional area of carbon for co-sputtering.
The optical gap and the content of carbon and fluorine are increased with increasing CF4 gas pressure. The composition of the films can be controlled using co-sputtering and changing CF4 gas pressure.View full abstractDownload PDF (850K) -
Masahiro HIRATA, Masatoshi ONO, Yoshitsugu TODA, Katsuya NAKAYAMA1982 Volume 25 Issue 5 Pages 372-379
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSSecondary standard ionization gauges (VS-1) have been calibrated by using the primary standard McLeod gauge at ETL for about twenty years. The average value of the sensitivities is 0.137 Pa-1. About 85% of the gauges have sensitivities with less than ± 10% deviation from the average. It was confirmed by the X- ray photograph of the gauge and the experiment of a nude type gauge with movable electrodes that the spread of the sensitivities are mainly caused by the electrode displacement. It is also discussed that the technical problems connected with the use of the gauge as a transfer gauge for the international comparison of vacuum standards.View full abstractDownload PDF (1224K) -
Tohru ISHITANI, Hifumi TAMURA1982 Volume 25 Issue 5 Pages 380-388
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSEmission characteristics, such as ion current vs. voltage relationships, ion emission angle, ion current fluctuation, temperature effect, and mass analysis, are measured for a hydrodynamic (EHD) liquid-gallium ion source. A scanning ion microprobe system using a liquid-gallium ion source and a voltage asymmetric three-electrode lens is developed. It produces 2-20 keV Ga+ beams of 0.1-5 μm diameter with 20 pA-8nA current. This ion optical system is well suited for variable-energy microprobe applications.View full abstractDownload PDF (1573K) -
Yutaka KIMURA, Teruhiko FURUSHIM1982 Volume 25 Issue 5 Pages 389-391
Published: May 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (337K)
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