Shinku

Future of Ion Plating Technique

Kunihiro KASHIWAGI

2001 Volume 44 Issue 4 Pages 412-417
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.412

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High Rate Ion Plating of High-Current Hollow Cathode Discharge

Yukio INOKUTI

2001 Volume 44 Issue 4 Pages 418-427
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.418

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Control of Properties for Thin Films Prepared by Using RF-DC Coupled Magnetron Sputtering

Takeshi TANAKA, Keishi KAWABATA

2001 Volume 44 Issue 4 Pages 428-434
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.428

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R. f power and d.c. bias were applied simultaneously to the target in a conventional magnetron sputtering system in order to control the growth kinetics, compositional ratio and crystalline structure for metal, metal nitride, and compound films. It was possible to prepare the refractory metal (W, Ta, Mo), metal nitride (TiNx, SnNx), and compound material (CuI) films deposited at a wide range of d.c. bias voltages by this system. The film growth coefficient (deposition rate/ion current density) of metal films was significantly influenced by the target d.c. bias. The compositional ratio for SnNx and CuI films could also be easily controlled by the target d.c. bias. It is shown that this deposition process is a useful method to form metal films with high purity and low resistivity, and to easily control the x of Mg_xNi films by the target d.c. bias.

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Application of the Ion Plating Process Utilized High Stable Plasma to the Deposition Technology

Masaru TANAKA, Hiroyuki MAKINO, Ryouji CHIKUGO, Toshiyuki SAKEMI, Kiyo ...

2001 Volume 44 Issue 4 Pages 435-439
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.435

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Micro Variable Infrared Filter using Magnetron Sputtering System Enhanced with an Inductively Coupled RF Plasma for CO₂ Measurement

Hitoshi HARA, Naoki KISHI

2001 Volume 44 Issue 4 Pages 440-444
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.440

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We have developed a micro variable infrared filter using a magnetron sputtering system enhanced with inductively coupled RF plasma, and have demonstrated CO₂ concentration measurement using silicon micro bolometers and the filter as a Non-Dispersive Infra-Red (NDIR) system. The micro variable infrared filter was tuned to two different wavelengths, on and off the CO₂ absorption band at 4.3 μm. By combining the NDIR sysytem with a conventional infrared source, concentration of CO₂ could be measured in a range of 1000-5000 ppm, with a reproducibility of ± 3.6% (3σ) of the measured values.

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A Normal Cold Cathode Magnetron Vacuum Gauge Containing a Magnet in the Cathode

Tatsuo ASAMAKI, Hirohisa TAKAHASHI, Tomoko MATSUDA, Noriaki MASUI, Tsu ...

2001 Volume 44 Issue 4 Pages 445-450
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.445

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Aiming at elimination of the sudden change and inflection of the discharge current at a pressure, five type magnetron gauges containing a magnet inside of the electrode are investigated. One is a hand drum type magnetron gauge. Others are normal cylindrical magnetron gauges of various sizes. It is found that a normal cylindrical magnetron gauge, which contains rather big magnet inside of the cathode with the magnetic flux density of 0.091 [T] at 1.8 mm from the cathode surface, has wider stable pressure range and discharge voltage range, and shows good linearity of the pressure vs the discharge current characteristics in log-log plots. The sensitivity I/P is 3.96 (at 1 × 10^-4 [Pa]) and 0.861.06 (at 1 × 10^-6 [Pa]) [10^-2 A/Pa], the slope of the pressure vs the discharge current characteristics in the log-log plots is 1.097 (at 1 × 10^-4 [Pa]) and 1.684 (at 1 × 10^-6 [Pa]) at the discharge voltage of 6 [kV] without any sudden change and inflection of the discharge current. The others also have good linearity of the pressure vs the discharge current characteristics in log-log plots at the discharge voltage of 6 [kV]. But, these gauges have sudden changes and inflections, except for 6 [kV] of the discharge voltages.

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Excimer laser Annealing of Ion-implanted SiC and Suppression of Implantation-induced Damage by Simultaneous Excimer laser Irradiation During Ion Implantation

Yuji HISHIDA, Jun KUDO, Masanori WATANABE

2001 Volume 44 Issue 4 Pages 451-455
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.451

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In order to decrease the annealing temperature of ion-implanted SiC and reduce accumulated damage in SiC during ion implantation, a non-thermal-equilibrium annealing process using a pulsed excimer laser and simultaneous excimer laser annealing during ion implantation (SLII) were carried out. Laser annealed and SLII SiC were characterized by Rutherford backscattering channeling measurement. When 3, 000 shots and 30, 000 shots of laser irradiation were performed, the χ values of the N⁺ implanted SiC were suppressed from 89% before irradiation to 44% and 24%, respectively. When 30, 000 shots and 300, 000 shots of laser irradiation were performed, the x values of the Al⁺ implanted layers were suppressed from 64% before irradiation to 20% and 10%, respectively. Laser annealing brought good results in reducing the annealing temperature and suppressing damage in the ion-implanted SiC. Similarly, the χ values of the N⁺ implanted layer were decreased from 6365% to 3.55.7% by SLII. SLII also proved to be effective for suppressing implantation-induced damage in SiC.

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Laser-Induced Fluorescence Imaging of NO Removal in Non-Thermal Plasma Processing with Pulsed Corona Discharges at Atmospheric Pressure

Hisanao HAZAMA, Masanori FUJIWARA, Mitsumori TANIMOTO, Sumio KOGOSHI

2001 Volume 44 Issue 4 Pages 456-461
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.456

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Removal processes of NO in non-thermal plasmas produced by pulsed corona discharges at atmospheric pressure were diagnosed by both spatially and temporally resolved laser-induced fluorescence (LIF) spectroscopy. The uncertainty in the quantitative measurement of NO concentration due to a quenching effect was evaluated by measuring the distribution of the effective decay time of the LIF signal. Depression profiles of NO concentration along positive streamers were observed by a single-shot LIF measurement. The total amount of NO removal and the corresponding specific energy cost were also derived from the LIF images averaged over multiple shots of the discharges. It was found that the diffusion and the recombination loss of nitrogen atoms influence the energy efficiency of NO removal.

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[title in Japanese]

[in Japanese]

2001 Volume 44 Issue 4 Pages 462-465
Published: April 20, 2001
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.44.462

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