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Volume 23, Issue 6
Displaying 1-5 of 5 articles from this issue
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Akihisa MATSUDA1980 Volume 23 Issue 6 Pages 277-282
Published: June 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSDownload PDF (880K) -
Zensaburo KABEYA, Kenya AKAISHI, Akira MIYAHARA, Tetsuji GOTOH1980 Volume 23 Issue 6 Pages 283-288
Published: June 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSA torsion microbalance having the sensitivity of 4.5 × 10-7 g/div. has been constructed and applied for the measurement of sputtering yield of a polycrystalline niobium sample for Art-ion irradiation in the energy region from 0.32.5 keV. In the sputtering experiment, the ion beam currents from 0.3 to 1.6 μA were used and the incident angle of the beam was normal to the Nb plate. The measured yields have compared with other results. Although the microbalance has sufficient performance on application for sputtering yield measurement, it is essential to use ion beam current more than 100 μA for the measurement of lower sputtering yield than unity.View full abstractDownload PDF (1006K) -
(I) Structures of Ga and Field Emission CurrentMasaya IZUCHI, Kenji YAMADA, Minoru WADA, Osamu NISHIKAWA1980 Volume 23 Issue 6 Pages 289-296
Published: June 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSEvaporation fields of Ga covering a W or a Mo tip surface were measured by finding the variation in the field emission current due to the field evaporation of the Ga layer. The observed current variation suggests the existence of two Ga layers; the overlayer and the interface layer in which Ga atoms are in direct contact with the substrate atoms and arranged in the pseudomorph or the superstructure. The evaporation field of the overlayer is almost independent of the substrate and the crystal plane, and is significantly lower than that of the interface layer, indicating that the binding energy of the overlayer is much smaller than that of the interface layer. An interesting finding is that the evaporation fields of the pseudomorph and the superstructure on W are nearly equal to those on Mo, respectively, in spite of the large difference in the evaporation fields of W and Mo. The measurement of the work functions of the Ga layers and the substrate revealed that the Ga pseudomorph maximizes the work function.View full abstractDownload PDF (1619K) -
(II) Temperature Dependence of Evaporation FieldMorikazu KONISHI, Minoru WADA, Osamu NISHIKAWA1980 Volume 23 Issue 6 Pages 297-302
Published: June 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSGa atoms on a W surface exhibit various structures; superstructure, pseudomorph and an overlayer that retains its own lattice structure. The evaporation field of Ga forming these structures varies more significantly with temperature than that of the substrate W, which indicates that the valency of W ions is higher than that of Ga ions.
At lower temperatures, the evaporation field is less dependent on temperature. The observed result can be attributed to the increase in the number of atoms which are evaporated by the tunneling process through a potential barrier reduced by a high field.
The evaporation fields of the superstructure and the pseudomorph contacting the substrate W surface are found to be more dependent on temperature than the overlayer.View full abstractDownload PDF (1106K) -
Katsuhisa USAMI, Toshikazu SHIMADA, Yoshifumi KATAYAMA1980 Volume 23 Issue 6 Pages 303-309
Published: June 20, 1980
Released on J-STAGE: September 04, 2009
JOURNAL FREE ACCESSAmorphous Si-C with H (aSixC1-x : H) alloy system formed in the gas mixture of Ar + 20% H2 by r.f. sputtering method has been studied quantitatively by X-ray photoelectron spectroscopy (XPS). The composition x has been obtained as a function of the fractional area (A) of Si on the sputtering target by using epitaxial grown SiC films as a standard. As a result, the composition x can be approximately evaluated by the equation; x = A/ {A + (1-A) ·ξ}, (ξ = 0.54), where ξ is the sputtering ratio of graphite to Si.View full abstractDownload PDF (922K)
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