Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 26, Issue 3
Displaying 1-5 of 5 articles from this issue
  • Hiroyuki OYANAGI, Toshiaki OTA
    1983 Volume 26 Issue 3 Pages 219-245
    Published: March 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Guohua SHEN, Keisuke GOTO, Kazuo ISHIKAWA
    1983 Volume 26 Issue 3 Pages 246-250
    Published: March 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    An isolation amplifier was used to detect Auger electrons in a commercial type Auger electron spectroscopy (AES) system with a cylindrical mirror analyzer (CMA). Auger spectra of energy distribution type and of differentiated type were obtained simultaneously. The versatility of the isolation amplifier was demonstrated and discussed.
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  • Kiyoshi FUJII, Shigeaki ZAIMA, Hiroshi ADACHI, Shigeki OTANI, Cyuhei O ...
    1983 Volume 26 Issue 3 Pages 251-258
    Published: March 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Field emission characteristics concerning single crystal tips of TiC and ZrC have been studied. Experimental finding are as follows :
    1) Step and spike like instabilities are observed in the field emission current from the TiC tip at room temperature. The level of the instability is increased both with increasing current level and with increasing ambient gas pressure.
    2) On the other hand, a random noise is observed in the field emission current from the ZrC tip. The level of the random noise is lower than that from W tip.
    3) Oxidizing the tip surface reduces the work function, and hence it makes possible to obtain the larger current at lower voltages.
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  • Toshiji NISHIJIMA, Naoto KOBAYASHI
    1983 Volume 26 Issue 3 Pages 259-265
    Published: March 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    An experimental system for the absolute measurements of He re-emission has been constructed. It mainly consists of a quadrupole mass spectrometer and specimen annealing equipments which connect to a 300 keV ion beam accelerator, and its operation can be controlled by a computer. Its constitution and performances, and examples of experimental results are reported. For the purpose of investigating the factors which inhibit blister formation or promote gas re-emission, He re-emission from single crystals and alloys has been measured during specimen annealing after irradiation with 100 keVe+ ion beam. By using an electron gun heater, a specimen can be annealed from room temperature to 2, 000K at a stepwise rate of 50 K/min. Almost all of the implanted helium can be detected over the fluences of 2 × 1013 to 1 × 1017 ions/cm2.
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  • Hiroyuki KAWANO, Tetsuro GODA, Hiromichi TAKEICHI, Yoshiaki HIDAKA
    1983 Volume 26 Issue 3 Pages 266-269
    Published: March 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    During the course of a mass spectrometric study of thermal negative chloride ion production from hydrogen chloride molecules incident upon a tungsten filament (F) at a high temperature (2, 000-2, 200K), we found an abnormal emission of a negative ion, which changed in mass position in a mass spectrum according to a change in the ion-extraction voltage applied to F and which was stronger in emission current than the thermal chloride ion emitted from F. Possible mechanisms of secondary negative ion production by a very strong thermal electron emission current (>10 mA) were examined from the viewpoint of kinetic energy of the ion under study. Results thus obtained lead to the conclusion that the abnormal ion of interest is the secondary negative chloride ion desorbed by electron impact on the inside surface of a stainless steel cylinder surrounding F and also suggest that the present phenomenon of electron-stimulated negative ion desorption from a surface at a very low temperature (less than about 600K) may provide a strong and stable negative ion source available for even those atoms and radicals with a smaller value of electron affinity.
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