A very small amount of H
2 gas was introduced in the sputtering environment to get high quality ZnS : Mn active layer for thin-film electroluminescent device. The effect of H
2 gas concentration on the ZnS host material and the luminescent center in the active layer was examined.
Electron spin resonance (ESR) investigations were performed to examine the Mn
2+ cohesive state. The peak intensity of isolated single Mn
2+ increased when the partial pressure of H
2 was increased up to about 2.7 × 10
-6Pa. And when the amount of H
2 was increased further, isolated single Mn
2+ signal decreased and crystallinity decreased because of the decrease in S of the ZnS host material.
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