Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 47, Issue 2
Displaying 1-5 of 5 articles from this issue
  • Yoshihiro YOKOTA, Takeshi TACHIBANA, Yutaka ANDO, Koji KOBASHI
    2004 Volume 47 Issue 2 Pages 59-64
    Published: February 20, 2004
    Released on J-STAGE: January 30, 2010
    JOURNAL FREE ACCESS
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  • Takayuki TAKAHAGI, Hiroyuki SAKAUE, Yutaka TANIGUCHI, Yosuke OKAMURA, ...
    2004 Volume 47 Issue 2 Pages 65-69
    Published: February 20, 2004
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
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  • Manufacture of the Flow Measurement System for Rarefied Gases
    Wataru SUGIYAMA, Tadashi SAWADA, Masuhisa YABUKI
    2004 Volume 47 Issue 2 Pages 70-75
    Published: February 20, 2004
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    The aim of this paper is to clarify the effects of surface roughness and downstream pressure on the rarefied gas flow through passages. Surface roughness is modeled by two-dimensional triangular roughness. In the calculation, molecules are assumed to scatter from slope of triangular roughness according to the cosine law. Conductance of rarefied gas flows through passages is calculated using the Monte Carlo method. In the experiment, a flow measurement system for rarefied gas is manufactured to measure flow rate through passages. Experiments and calculations are conducted in the near free molecule flow region. Results of this study are as follows; The manufactured flow measurement system can measure flow rates below 1 × 10 -4 [Pa·m3/sec] accurately. The conductance of rarefied gas flows is affected by the downstream pressure even if pressure difference is equal in two flows. The effect of surface roughness does not change with the downstream pressure of passages.
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  • Atsushi NITTA, Masao AOZASA
    2004 Volume 47 Issue 2 Pages 76-81
    Published: February 20, 2004
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    A very small amount of H2 gas was introduced in the sputtering environment to get high quality ZnS : Mn active layer for thin-film electroluminescent device. The effect of H2 gas concentration on the ZnS host material and the luminescent center in the active layer was examined.
    Electron spin resonance (ESR) investigations were performed to examine the Mn2+ cohesive state. The peak intensity of isolated single Mn2+ increased when the partial pressure of H2 was increased up to about 2.7 × 10-6Pa. And when the amount of H2 was increased further, isolated single Mn2+ signal decreased and crystallinity decreased because of the decrease in S of the ZnS host material.
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  • Hui ZHANG, Isao YOSHIMURA, Eiji KUSANO, Toshihiro KOGURE, Akira KINBAR ...
    2004 Volume 47 Issue 2 Pages 82-86
    Published: February 20, 2004
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Carbon nano-flakes were formed on Si (001) surface by rf-magnetron sputtering. A graphite plate was used as the sputtering target. Ar-methane mixture gas was introduced into the sputtering chamber as the discharge gas. The structure of the sputter deposited samples was investigated by field emission type scanning electron microscope, high resolution transmission electron microscope and electron diffraction method. Carbon nano-flakes were observed on the Si substrate after a few minute sputter deposition. No other allotropes such as nano-tubes, soots, nano-fibers and nano-horns were observed. The flakes were found to be graphite sheets and to grow to the plane direction with increasing time. The length of the flake seemed to increase approximately proportionally to the sputter deposition time, while the thickness increase was very small. The formation process of the flake was discussed considering the adsorption and desorption process of carbon atoms on graphite surface.
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