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Volume 28, Issue 8
Displaying 1-6 of 6 articles from this issue
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Differences between evaporated films and bulk glassesKeiji TANAKA1985 Volume 28 Issue 8 Pages 615-621
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (988K) -
Makoto NISHIMURA1985 Volume 28 Issue 8 Pages 622-630
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
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Junko HASHIMOTO, Akira SAKAI, Akiko JIMBO, Toshio SAKURAI1985 Volume 28 Issue 8 Pages 631-635
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSField-ion microscopy of semiconductores is now becoming a popular research project in many laboratories. However, it is still not easy to get good field-ion images (FI images) of semiconductores and to interprete the obserbed images. We present here some computer simulations of the field-ion images of Si obtained by using a low-cost microcomputer. Using the conventional thin shell method for image formation, FI images of Si tips oriented along [111], [110] and [100] directions were simulated and compared with the experimental FI images. A good agreement was obtained in the case of the [111] oriented tip surface, while in other cases a detailed comparison was found to be difficult because of the lack of sufficient resolution in the observed FI images. This work can be extended and applied to the study of metal-semiconductor interfaces.View full abstractDownload PDF (1073K) -
Keiko KUSHIDA, Hiroshi TAKEUCHI1985 Volume 28 Issue 8 Pages 636-640
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe effect of the crystalline properties of gold film on those of ZnO film was investigated in detail for a ZnO/gold/fused quartz structure. The investigations were done using X-ray diffraction, a rocking curve method, and RHEED. It was found that the crystalline properties of rf-sputtered ZnO films were strongly dependent on those of gold films. Highly c-axis-oriented ZnO films can be fabricated on the gold films whose σ for (111) rocking curves is less than 3°. The standard deviation σ for ZnO (002) rocking curve is decreased as the ZnO film thickness is increased and is less than 1° for 10μm ZnO films.View full abstractDownload PDF (751K) -
Makoto ASAI, Hiromu UEBA, Chiei TATSUYAMA1985 Volume 28 Issue 8 Pages 641-647
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe initial stage of hetero-epitaxial growth of Ge films on a Si (100) -2×1 surface has been investigated by LEED and AES. When the substrate is kept at room temperature, layer by layer growth of Ge films is observed up to 6 monolayers. For the substrare heated at 350°C, the growth of Ge films is characterized by the Stranski-Krastanov type, i.e., the first 3 monolayers grow as layer by layer followed by a 3-dimensional island formation. The growth mechanism thus studied is similar to a case of Ge on Si (111) -7×7 surface. However the change of AES intensity of Ge on Si (100) by annealing suggests that the bond strength between Ge and Si is stronger on Si (100) than on Si (111) surface. On contrast to a case of Ge on Si (111) -7×7 surface, where 7×7 superstructure is replaced by 5×5 one at about 2 monolayers coverage of Ge, Ge on Si (100) -2×1 also still retains the 2×1 superstructure.View full abstractDownload PDF (1084K) -
Joshin URAMOTO1985 Volume 28 Issue 8 Pages 648-650
Published: August 20, 1985
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSAn advanced method of sheet plasma production is found experimentally : A primary sheet plasma produced between a discharge anode and cathode by the previous method due to two rectangular permanent magnets, diffuses into the low pressure region through a rectangular slit of the anode while electrons are reflected along magnetic field by a floating metal plate at the end of the plasma. By this advanced method, we can produce a sheet plasma in a lower pressure, with a more uniform width and along a more uniform magnetic field in comparison with the previous method.View full abstractDownload PDF (622K)
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