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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 45, Issue 9
Displaying 1-6 of 6 articles from this issue
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  • Particle Acceleration by Ultra-intense Laser-plasma Interactions
    Kazuhisa NAKAJIMA
    2002 Volume 45 Issue 9 Pages 687-692
    Published: September 20, 2002
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.45.687
    JOURNAL FREE ACCESS
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  • Plasma and Cu-Seed Layer Characteristics using VHF (60 MHz) Magnetron Sputtering System
    Makoto SATO, Hanako NAGAHAMA, Toshihiko HAYASHI, Eisaku WATANABE, Yuki ...
    2002 Volume 45 Issue 9 Pages 693-698
    Published: September 20, 2002
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.45.693
    JOURNAL FREE ACCESS
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  • Particle Transport Process During Sputter Deposition Process in the Pressure Range of 2-20 Pa
    Takeo NAKANO
    2002 Volume 45 Issue 9 Pages 699-705
    Published: September 20, 2002
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.45.699
    JOURNAL FREE ACCESS
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    Transport process of sputtered atoms becomes more complex in mid-to-high pressure environment (220 Pa). At high pressures, sputtered atoms collide with ambient gas atoms frequently, and are ready to thermalize. We have been studying the situation with both Monte-Carlo (MC) computer simulation and experiment. We have extended the MC simulation in two ways : One is the formulation of the relative motion of the colliding gas atom against the sputtered atom, and the other is the description of the flow of decelerated atoms with a diffusion equation. This new simulation has been applied to the pressure dependence of the thickness profile of sputtered Cu films, and also to that of the film composition in the case of the sputter deposition from LaB6 target. It has been found experimentally that the relative Cu deposition ratio on hidden faces takes the maximum and the B/La ratio takes the minimum, both at midst pressure. Numerical simulation agrees well with the experimental results, and we conclude that these experimental behaviour can be ascribed to the thermalization of sputtered particles.
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  • Field Emission Properties from p-Type GaAs Emitter Fabricated by Wet Etching Process
    Tomomi YOSHIMOTO, Dai KAMIMARU, Satoru KIKUCHI, Naohiro YOKOGAWA, Tats ...
    2002 Volume 45 Issue 9 Pages 706-709
    Published: September 20, 2002
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.45.706
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    The field electron emission properties from a p-type GaAs emitter fabricated by wet etching process is investigated. Since the emission pattern doesn't show any symmetry, the surface of the emitter isn't completely clean. The nonlinear Fowler-Nordheim (F-N) plots are obtained. The emission current at gentle slope region in the F-N plots shows strong light intensity and temperature dependence. Therefore, it is found that the emission current is restricted by electron generation ratio in the conduction band. The estimated activation energy of emitted electron is 0.31 eV. The most probable conclusion is that the Fermi level is pinned below 0.31 eV from bottom of the conduction band and electrons generated from the surface state to the conduction band is emitted.
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  • Infrared Absorption Measurement of Nitrogen Doped Czochralski Silicon Crystal
    Tomokazu MATSUMOTO, Yoichiro YAMANAKA, Naohisa INOUE
    2002 Volume 45 Issue 9 Pages 710-714
    Published: September 20, 2002
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.45.710
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    Nitrogen doping is promising to reduce grown-in defects in Czochralski silicon (CZ-Si) crystal. It is necessary to measure the nitrogen concentration accurately. As the nitrogen concentration is very low, nitrogen absorption is affected by various absorptions such as those by lattice vibration and oxygen. Procedures to cancel them were developed. As the result, the detection of weak nitrogen-related peaks became possible. As nitrogen in CZ-Si crystal forms complexes with oxygen, we assigned the peaks and proposed to measure the N-N related peak at 963 cm-1 as well as those at 996 and 1018 cm-1 caused by N-O complexes. Conversion coefficient from the sum of absorption coefficients of these peaks to the nitrogen concentration estimated by segregation coefficient was confirmed to be nearly equal to the value reported for floating zone silicon (FZ-Si) crystal.
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  • Energy Dependence of Relative Sputter Etching Rates for Silicide Films
    Yasuhiro YAMAUCHI, Michiko YOSHITAKE, SERD Project Group In Surface A ...
    2002 Volume 45 Issue 9 Pages 715-718
    Published: September 20, 2002
    Released on J-STAGE: April 23, 2010
    DOIhttps://doi.org/10.3131/jvsj.45.715
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    We measured sputter etching rates of silicide films (CoSi2, NiSi2, TiSi2 and WSi), and investigated the ion energy dependence. We found that the relative sputter etching rates of them to that of SiO2 film were almost independent of sputter ion energy. We estimated surface binding energy of Ni from relative sputter etching rates and the ratio of calculated nuclear stopping power cross-sections of Ni and Si. We found that the surface binding energy determined by the relative sputter etching rate, was in accord with the well-known value.
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