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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 34, Issue 11
Displaying 1-7 of 7 articles from this issue
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  • Microvacuum-Tubes
    Junzo ISHIKAWA
    1991 Volume 34 Issue 11 Pages 793-798
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.793
    JOURNAL FREE ACCESS
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  • Optical Properties of Microcrystals Embedded in Solid Matrices
    Shinji HAYASHI
    1991 Volume 34 Issue 11 Pages 799-806
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.799
    JOURNAL FREE ACCESS
    Download PDF (1207K)
  • Helium Leak Detector
    Akio IGAWA
    1991 Volume 34 Issue 11 Pages 807-812
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.807
    JOURNAL FREE ACCESS
    Download PDF (751K)
  • VLSI Materials and Processes Characterization using Newly Developed Thermal Desorption Spectroscopy
    Norio HIRASHITA, Tsuneo AJIOKA, Yasushi HINAGA
    1991 Volume 34 Issue 11 Pages 813-819
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.813
    JOURNAL FREE ACCESS
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    Ultra-high-vacuum thermal desorption mass spectroscopy has been newly constructed for VLSI material and processes characterization. A combination of the load-lock system and direct heating method using an external infraed lamp enabled rapid measurements (typically less than 1 hour/sample) and accurate ramp heating ranging from 6 to 300 deg/min, up to 850°C without significant background increases. The detection limit of desorbed gas was found to be approximately 1/20 monolayer on Si surfaces even for H2 and H2O. Its applicability to VLSI Characterization has been demonstrated by studying the outgassing and chemical structures of interdielectric films, surface structures of cleaned Si wafers, and CF4/CHF3 plasma-exposed Si surfaces. It is concluded that this system has the potential to play a key role in not only surface analysis but also the development and optimization of VLSI materials and processes.
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  • Compact Nuclear Microprobe System for RBS/PIXE
    Ken-ichi INOUE, Kiyotaka ISHIBASHI, Yutaka KAWATA, Hirofumi FUKUYAMA, ...
    1991 Volume 34 Issue 11 Pages 820-826
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.820
    JOURNAL FREE ACCESS
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    A compact unclear microprobe system for RBS/PIXE with an overall size of 4.5mL×2.5mW×1.8mH, has been created by aligning an accelerator, objective slits, an E×B filter and a doublet of the quadrupole magnet in a straight line. The beam line was designed to produce a collimation beam with a divergence of less than 0.01 degrees for channeling measurements, as well as microprobe with a spot size of about 1μm for micro RBS/PIXE measurements, achieved by merely adjusting the lens currents. The measuring chamber has a goniometer of our original design with four axes and a revolving disk head holding 30 samples for automatic sequential measurements. The combination of two beam modes and two sample manipulators makes the system versatile.
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  • Structure and Composition of Au-Cu Alloy Single Crystal Surface by Low Energy Ion Scattering Spectroscopy (ICISS)
    Kiyoshi KAWAMOTO, Shigemitsu NAKANISHI
    1991 Volume 34 Issue 11 Pages 827-833
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.827
    JOURNAL FREE ACCESS
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    Surface structures and comopositions of Au3Cu(001) and Au9Cu(001) were investigated by means of impact collision ion scattering spectroscopy (ICISS). The experimental results were assessed by a recently developed numerical computer simulation. At room temperatures, both surfaces revealed unreconstructed (1×1) structures, but with about 10% contraction of the interlayer spacing between the first and second layers. The topmost layers of both surfaces were found to be occupied mostly by Au atoms. For the second layer, the Cu concentration was estimated to be close to the full occupancy in the case of Au3Cu(001) and about one-half in the case of Au9Cu(001). With respect to the unreconstructed Au9Cu(001), the second AuCu layer was suggested to be in a disordered state. At an eleveted temperature about 350°C, a reversible transformation from the unreconstructed (1×1) to reconstructed (5×1) -like structure was observed where the topmost layer of the reconstructed surface was simulated using a monoatomic layer of quasi-hexagonal net corresponding to the (5×1) structure.
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  • On the Quality of Vacuum by Electron Stimulated Desorption Experiments
    Kazuyuki UEDA
    1991 Volume 34 Issue 11 Pages 834-840
    Published: November 20, 1991
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.34.834
    JOURNAL FREE ACCESS
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    Electron stimulated desorption is very sensitive to the gas adsorption layer on solid surfaces.
    In particular, it is one of the most powerful techniques for detection of hydrogen on a surface contaminated by hydrogen and water vapor. Here, we report a relation between the quality of the vacuum and surface contamination based on the results of adsorption and desorption studies of hydrogen, water vapor and oxygen on silicon and metal surfaces.
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