Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 17, Issue 1
Displaying 1-3 of 3 articles from this issue
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  • A Concept of a Nuclear Fusion Reactor and Some Engineering Problems
    Masaru SUGIURA
    1974 Volume 17 Issue 1 Pages 1-8
    Published: January 20, 1974
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.17.1
    JOURNAL FREE ACCESS
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  • Plasma Micro-Jet Apparatus for Thermo-Chemical Treatment of Refractory Films
    Akio ITOH, Shigemi IURA, Fujitoshi SHINOKI
    1974 Volume 17 Issue 1 Pages 9-18
    Published: January 20, 1974
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.17.9
    JOURNAL FREE ACCESS
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    An r.f plasma micro-jet apparatus of transferred type for thermal and chemical treatment of re-fractory films has been developed. The plasma micro-jet generator is characterized by highly focusing plasma spot and making ready to generate and stabilize the plasma arc. Rf supply of 4 MHz was used. The operating characteristics, especially the dimension and temperature of plasma spot have been investigated as a function of rf voltage, argon flow rate, stand-off distance, composition of plasma gas, and other parameters of operation.
    The spot temperature above 3300°C and the spot diameter smaller than 0.3 mm was obtained on operating at the optimum conditions. Heating treatments of sputtered films of TiC and TiN were carried out by scanning with argon plasma micro-jet and argon-nitrogen one, respectively. The development of crystal growth in the film specimens by plasma irradiation were verified by the observation with an electron microscope and an X-ray micro-diffractometer.
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  • Preparation of CdS Thin Films by Reactive Sputtering Method
    Hiroharu HIRABAYASHI, Minoru NOGAMI
    1974 Volume 17 Issue 1 Pages 19-22
    Published: January 20, 1974
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.17.19
    JOURNAL FREE ACCESS
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    In the mixed atmosphere of sublimated sulphur and argon, nealy stoichiometric thin films of CdS were prepared by reactive sputtering. Their properties were very dependent on the sputtering conditions, i.e., sputtering rate, sublimation temperature, argon gas pressure, and etc. The dark resistivities of CdS sputtered films in sulphur vapour at 125°C were about 2×1010Ω-cm. CdS-CdTe heterojunctions were formed by evaporating CdTe on reactive sputtered CdS films. The rectifying characteristics and photo-response spectra in visible region for these junctions were observed.
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