Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 19, Issue 3
Displaying 1-3 of 3 articles from this issue
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  • Crystallization of MnAl6 alloy phase in Vacuum Codeposited Mn-Al Films
    Kentaro YOSHIDA, Akira TAKEKAWA
    1976 Volume 19 Issue 3 Pages 73-81
    Published: March 20, 1976
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.73
    JOURNAL FREE ACCESS
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    Mn-Al films with different compositions ranging from 8 to 21 at. % Mn were prepared by simultaneous vacuum deposition and their crystallization occurring in the temperature rise and their crystal structures were investigated through transmission electron micrographs and the diffraction patterns. Shape of the crystals emerging in the films depends on their composition. MnAl6 crystals grow in complete circular form when the composition is exactly at that of MnAl6, i.e. 14 at. % Mn. As the composition increases from this ideal value, crystals grow in circular, blade-like and avalanche form respectively. Diffraction patterns of these crystals also show a dependence of disorder in MnAl6 crystal lattice on the film composition. Extra spots, diffuse streaks and deficiency of spots were observed and some of them are interpreted to be due to disorder of stacking of atomic planes parallel to (001) MnAl6 lattice. A model of the disordered atomic arrangement is proposed to account for the deficiency of the diffraction spots.
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  • Effect of Vacuum Quality on the Deposition Rate of SiO2 in an rf-Sputtering System
    Naokichi HOSOKAWA
    1976 Volume 19 Issue 3 Pages 82-89
    Published: March 20, 1976
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.82
    JOURNAL FREE ACCESS
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    In spite of carefull regulation, the reproducibility of SiO2 deposition rate has been sometimes poor in an rf sputtering system. This paper describes systematic experiments on the relationship between the deposition rate and vacuum quality in some sputtering systems. Data of the deposition rate versus vacuum characteristic parameters such as ultimate prssure, argon flow rate during sputtering, leak rate of air or water vapour, and baking time of the sputtering chamber are given. In addition gas analysis made by quadrupole mass filter shows that the pressure of water vapour is commonly most responsible for the reproducibility of the deposition rate. Internal liquid nitrogen trap pumping selectively water has been proved to be effective to suppress the decrease of the deposition rate and to improve reproducibility.
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  • Surface Passivation of Compound Semiconductor
    Takuo SUGANO
    1976 Volume 19 Issue 3 Pages 90-96
    Published: March 20, 1976
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.90
    JOURNAL FREE ACCESS
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