Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 13, Issue 11
Displaying 1-3 of 3 articles from this issue
  • Yoshikazu KURIYAMA
    1970 Volume 13 Issue 11 Pages 354-362
    Published: November 20, 1970
    Released on J-STAGE: January 28, 2010
    JOURNAL FREE ACCESS
    Download PDF (1948K)
  • Yoshio MURAKAMI
    1970 Volume 13 Issue 11 Pages 363-370
    Published: November 20, 1970
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    In order to prevent the deposition of evaporating materials onto the inner wall of deposition chambers, covering of the wall with plastic films has been proposed. In this case, the following conditions must be met for the plastic films : (i) Dissolved gases in the films can be easily removed, (ii) outgassing due to thermal decomposition is considerably low at below 300°C, and (iii) the sticking coefficients of vapors (evaporating materials) on the films must be unity.
    Evaluation of two groups of heat-resisting films indicates that polyimide films almost fulfill the above requirements, except that they take more time to be evacuated than Teflon films. The outgassing rates due to thermal decomposition of polyimide films are lower than 10-9 Torr·1/cm2·sec at below 260°C, which lie between a tenth and a twentieth of those of Teflon films. The sticking coefficients of nickel and gold on polyimide films are close to unity from the onset of deposition, while those on Teflon films are extremely low, differing from those on other films.
    Download PDF (1142K)
  • Katsuzo OKADA, Toshiaki HATSUSHIKA, Hiroshi TOMITA, Satoshi MOTOO, Nob ...
    1970 Volume 13 Issue 11 Pages 371-376
    Published: November 20, 1970
    Released on J-STAGE: January 28, 2010
    JOURNAL FREE ACCESS
    The initial oxidation of the (110), (111) and (100) copper surfaces, by changing the oxygen pressure and temperature, has been studied by low energy electron diffraction (LEED) techniques. The interactions of oxygen with copper showed different behaviors on each surface. The Cu (100) (2 × 3) -O and Cu (100) C (4 ×4) -O surface structures, which had not been observed, were obtained by heating in the low oxygen pressure range.
    Cu2O was formed on the (111) and (100) surfaces respectively and not observed on the (110) surface in the LEED pattern. The crystallographic relationships between Cu2O and the substrate are as follows ;
    (111) Cu2O // (111) Cu [110] Cu2O // [110] Cu
    (111) Cu2O // (100) Cu [110] Cu2O // [110] Cu
    (100) Cu2O // (100) Cu [110] Cu2O // [110] Cu
    The Cu (111) (2×2) R 30°-0 surface structure was observed on the Cu (111) surface. It may be considered that this structure appears in the transition process of the adsorption structure to Cu2O.
    Download PDF (2827K)
feedback
Top