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Volume 25, Issue 8
Displaying 1-6 of 6 articles from this issue
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Susumu KATO, Ryosuke KONISHI1982 Volume 25 Issue 8 Pages 537-545
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1070K) -
Tadayoshi SHIOYAMA, Soichi OGAWA, Katsumi TAKIGUCHI1982 Volume 25 Issue 8 Pages 546-551
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSPressure dependence of the electrical properties of TaN thin films was studied in order to use the films as the resistive thermoconductive pressure sensors. These films have two advantageous properties which are large effective heat-conducting area and small geometrical size. TaN thin films were deposited by reactive sputtering onto Corning 7059 glass at 1.5×10-3 Torr in a mixture of nitrogen and argon. The sensor thus formed is sensitive to the pressure change of He, and is suggested to use the pressure sensor as the leak detector with He gas. On the other hand, for Ar gas the sensor showed low sensitivity which suggests to use the pressure sensor for the measurement of reactive gases in Ar gas during the reactive sputtering.View full abstractDownload PDF (527K) -
Takao SUZUKI1982 Volume 25 Issue 8 Pages 552-560
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA detailed examination on magnetization distribution in bubbles and stripe domains in sputtered Ho-Co thin films has been made by high voltage electron microscopy in the defocused mode. A peculiar distribution of magnetization which accounts for the spot in the bubble is discussed. The spot corresponds to a so-called “core” region, around which the magnetization distributes in a vortex way. A calculation based on a model of magnetization distribution gives a diameter of about 200 to 300Å for such core regions, which is in reasonable agreement with the observed values. The dependence of the distance between two Bloch lines on the applied field is also discussed.View full abstractDownload PDF (2830K) -
Narumi INOUE, Yoshizumi YASUOKA1982 Volume 25 Issue 8 Pages 561-567
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThin nickel oxide layers grown on nickel films by sputter-oxidation in an oxygen plasma were studied by ellipsometry and ion microanalysis. It was found that the saturated oxide thickness depends on the oxygen pressure. For oxygen pressure of (4.55.3) ×10-4 Pa, the saturated oxide thickness was found to be 7090 Å by ellipsometry. This result was supported by the IMA measurement.
Replica electron microscopy of the nickel oxide layer indicated that the oxide, grown in the oxygen pressure of (4.55.3) ×10-4 Pa, had uniform distribution and that the surface got rough with sputter-oxidation time. However the oxide films grown in 7.5×10-4 Pa had many cracks and showed no saturation thickness.View full abstractDownload PDF (2168K) -
Tohru OHBIKI, Takeshi IMURA, Akio HIRAKI1982 Volume 25 Issue 8 Pages 568-573
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSMixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H2 increases (from 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H2 atmosphere in the same apparatus.View full abstractDownload PDF (1284K) -
Yoshinori HIBINO, Hiroyuki TETSUKA, Tomihiro HASHIZUME, Hidemi SHIGEKA ...1982 Volume 25 Issue 8 Pages 574-577
Published: August 20, 1982
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSSi (111) surfaces were exposed to neutral potassium atomic beams of very low energy (a few tens of meV), poduced by passing through a mechanical velocity selector. Potassium concentration in the Si specimens was depth-profiled by the use of an ion microanalyzer (IMA). Since the primary ion beam of IMA was found to cause the potassium adsorbed on the surface to migrate into the substrates much deeper than usually expected, prior to IMA analysis the substrates were cleaned with pure water to remove potassium from the surface. Potassium concentration of some samples thus treated was significantly higher than the background to a considerable depth (approx. 1 μm). The results also indicate that the potassium atom migration into Si crystals seems to be enhanced by increasing the velocity of incident potassium atoms (up to 400 m/s).View full abstractDownload PDF (534K)
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