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Volume 26, Issue 7
Displaying 1-5 of 5 articles from this issue
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Kazunari TAKI, Akihiro SUZUKI, Shin'ichi HIRAHATA, Shuzo MIZUTANI1983 Volume 26 Issue 7 Pages 599-605
Published: July 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSAn influence of Ar pressure on the film composition and the magnetic properties has been investigated for GdTbFe amorphous films prepared by rf sputtering. In the case of soda glass and fused silica substrates, Auger analysis shows that the dissociation of the substrate under electron bomberdment results in the increase of oxygen concentration near the interface. The composition of the film sputtered at 4×10-3 Torr Ar is close to RE/Fe area ratio of the target. With the increase of Ar pressure, the contents of Tb and Fe decrease while that of Gd increases, and the coercive force changes from about 4 kOe to 300 Oe. These results are attributed to the preferential resputterin.g effect and the surface oxidation of the Tb target. Spots of 1 μm in diameter can be written with the laser beam of 3 mW power and 0.25 μsec pulse width on the film prepared at 4×10-3 Torr Ar.View full abstractDownload PDF (789K) -
Yuichi MIKATA, Tomoyasu INOUE, Masaharu WATANABE, Shin-Ichiro TAKASU1983 Volume 26 Issue 7 Pages 606-613
Published: July 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSAn ultra-high vacuum apparatus for surface cleaning, thin film deposition and surface analysis is successfully developed for three inch diameter wafers. The apparatus consists of four chambers; sample entry chamber, sample transport chamber, surface treatment chamber, and surface analysis chamber, all of which are evacuated with oil free pumps. The sample transport chamber is newly designed to introduce sample directly into both surface treatment chamber and analysis chamber, in order to prevent undesired residual gas incorporation between the two chambers. The transport mechanism will be applicable to a future vacuum production line. Newly designed sample heating system is fabricated using tungsten wire heater and divided sapphire surroundings, which can elevate sample temperature up to 1200°CC.
Si wafers rinsed in various chemical solution were cleaned by heat treatment in the sample treatment chamber. Surface cleannes was examined by RHEED and AES measurements. Cleaned surface appeared at temperature from 775°C to 830°C, depending on chemical composition of the solutions.View full abstractDownload PDF (1587K) -
Masao WATANABE1983 Volume 26 Issue 7 Pages 614-621
Published: July 20, 1983
Released on J-STAGE: January 28, 2010
JOURNAL FREE ACCESSAdsorptions of CO and O2 on evaporated Ag and Cu films were studied by ellipsometry and resistivity measurements. Changes in ellipsometric angles δΔ and δΨ due to adsorption of CO or O2 were analyzed by an improved linear approximation of the stratified layer model of adsorption. The analysis deduced dielectric constants of the adsorbates. Dielectric constants ε1 obtained for chemisorbed CO and dissociatively chemisorbed oxygen are complex depending upon the wave length of incident light, though ε1 of molecular oxygen adsorbed weakly on Ag at 77K is real and close to that in liquid phase. δΔ and δΨ vary in non-linear fasions with the coverage of adsorbates. Many of coverage curves are described by the Lorentz-Lorenz equation for inhomogeneous distributions of the adsorbates. It is concluded for chemisorbed species that the real part of ε1 is negative, when a valence electron in an adsorbate forms a resonant bond with conduction electrons in a adsorbent, while the real part becomes positive, when the valence electron forms a strong covalent bond with an adsorbent surface atom. This concept is consistent with the Bennett and Penn theory.View full abstractDownload PDF (1045K) -
Hai Tao ZHENG, Toshio MORI, Yoshikatsu NAMBA1983 Volume 26 Issue 7 Pages 622-627
Published: July 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSElectrically insulating, mechanically hard and chemically corrosion resisting diamond-like carbon films have been produced by ionized deposition of acetylene gas. The structure of these films have been examined by means of electron diffraction. Obtained diffraction patterns show that the interlayer spacings of these films are very close to those of diamond. Growth mechanism of the films are discussed in connection with mass spectrometric analysis of ionized acetylene gas.View full abstractDownload PDF (1218K) -
Isamu KATO, Shin-ichi WAKANA1983 Volume 26 Issue 7 Pages 628-636
Published: July 20, 1983
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSWe have developed a new chemical vapour deposition system using a cavity type microwave discharge method to avoid the damage caused by plasma bombardment. The deposition region containing the substrate is separated from the discharge region by using a coaxial line type microwave CW discharge tube that can confine the discharge plasma in a predetermined region. Ar gas is fed into the outer tube of a coaxial double quartz tube and Ar gas plasma is created by microwave power. By the inner tube, SiH4 gas is concentrically introduced into the Ar gas plasma through the discharge tube, without a silicon deposition on the quartz tube wall. SiH4 gas is dissociated and flows into deposition region. Then, Si thin films are fabricated on the substrate out of the discharge plasma.
The deposition rate is several to tens Å/s. Very uniform Si thin films are fabricated over a circle with a 10 cm diameter while keeping the substrate at about 10 cm from the discharge tube end. The structure of the films is amorphous. The optical band gap is 1.8 to 2.4 eV.View full abstractDownload PDF (1123K)
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