Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 15, Issue 10
Displaying 1-3 of 3 articles from this issue
  • Takao HANASAKA, Masao HASHIBA, Toshiro YAMASHINA
    1972 Volume 15 Issue 10 Pages 356-361
    Published: October 20, 1972
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The reproducibility of mass spectra of a quadrupole mass filter for six hydrocarbons such as CH4, C2H6, C3H8, C2H2, C2H4 and C3H6 has been examined under a specified operational condition for the purpose of obtaining fundamental data to various applications. For each sample gas, the experiment was performed for three days and the spectrum was taken three times in every day at a constant gas pressure of 5×10-7 Torr (nitrogen equivalent value) by admitting the sample gas continuously into the vacuum system.
    The average value of pattern coefficient x, the standard deviation σ and the fluctuation coefficient 2σ/x were calculated from nine mass spectra by the ordinary statistical method. The fluctuation coefficients for each gas were found to be close to 0.02 when the pattern coefficient x was larger than 30. However, rather large fluctuations weer observed for x values smaller than 20 due to the reading error for small peak heights.
    It may be concluded that the quadrupole mass filter used in the present study is applicable to quantitative measurement within the error of less than 2% during a period of several days if the condition of vacuum system is carefully controlled.
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  • Toshiaki FUJIOKA, Tomoaki FUJINAMI
    1972 Volume 15 Issue 10 Pages 362-368
    Published: October 20, 1972
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The technology of making tantalum resistors is complicated, owing to the fact that tantalum films have three structures which are α-tantalum and β-tantalum and low density structure. The α-tantalum structure has the conventional b. c. c. structure corresponding to the bulk. The β-tantalum is told to show the tetragonal structure. In this paper, tantalum films are found to be produced in the R. F. sputtering system with typical background pressure of 3×10-6 Torr before introducing of Argon gas. In R. F. sputtering, β-tantalum tended to be obtained when sputtering was performed at high pressure of the order of 5×10-3 Torr. The R. F. sputtered tantalum films, α-structure are obtained less than the pressure of 5×10-3 Torr, and mixture of α- and β- structures are obtained between 6×10-3 Torr and 8×10-3 Torr. Above 8×10-3 Torr, complete β-structures in the film are found.
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  • Sukeo OTUKI, Kenya AKAISHI
    1972 Volume 15 Issue 10 Pages 369-373
    Published: October 20, 1972
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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