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Volume 21, Issue 3
Displaying 1-4 of 4 articles from this issue
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Yuko HIROHATA, Tetsuya ABE, Toshiro YAMASHINA1978 Volume 21 Issue 3 Pages 73-79
Published: March 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThin films of iron oxides and nitrides containing various amount of oxygen and nitrogen were prepared by an R.F. reactive sputtering. Changing the partial pressure of reactive gases (oxygen and nitrogen) from 5×10-6 to 5×10-3 Torr in argon gas (total pressure : PO2 (or PN2) + PAr = 5×10-3 Torr), thin films were deposited onto the glass substrates.
The deposition rate and the properties of the films such as electrical resistivity, crystal structure and chemical composition were examined with the partial pressure of reactive gases. A critical pressure at which the deposition rate of the films decreased drastically was observed by the reactive sputtering in argon plasma at the partial pressure of oxygen (2×10-4 Torr) and nitrogen (4×10-4 Torr). In both cases of the Fe-O2 and Fe-N2 reactive sputtering, the structures of the deposited films were observed to begin changing in the region of the critical pressures, namely, FeO, Fe2O3 and Fe3O4 in the Fe-O2 system and Fe2N, Fe3N and Fe4N in the Fe-N2 system were observed over the critical pressures.
Reactive sputtering experiments under helium gas instead of argon gas were also carried out in order to reveal the interaction between the plasma gases with different mass and the target surfaces in the sputtering process.View full abstractDownload PDF (1010K) -
Hideo SUGIURA1978 Volume 21 Issue 3 Pages 80-85
Published: March 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA method of vacuum deposition of Si combined with ion implantation of Sb was investigated. Sb contents in Si thin films at deposition temperatures of 290°C and 460°C were determined by neutron activation analysis. They were proved to be controllable with this method from the result of their liniar relationship to total ion current. In-depth profiles of Sb in Si films were measured by ESCA with a controlled ion mill. The depth of the implanted layer was in good agreement with the predicted one from experimental conditions. The half width of the distribution appeared to depend on the diffusion coefficient of ion implantation at high temperature. The Sb content evaluated from the distribution and that obtained from neutron activation analysis were the same order of magnitude.View full abstractDownload PDF (892K) -
Norio SAITOU, Shigehiko YAMAMOTO, Hiroshi OKANO1978 Volume 21 Issue 3 Pages 86-91
Published: March 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA theory on power spectral density function of field emission current fluctuation is presented. The basic idea is that the current fluctuations are related to the migration of adsorbates. Adopted model is that adsorbed molecules migrate inward or outward directions of the small observed area on the tip surface with two sorts of adsorption centers. The power spectral density function is formulated from the autocorrelation function by using Wiener-Khinchin Theorem. It is numerically analyzed by a computer. The dependency of the spectral density function, on frequency, average current, tip temperature and area size is discussed.View full abstractDownload PDF (746K) -
Yutaka KAGAWA, Yoshinobu SHIMA, Takaaki KAWAMURA, Takeo ICHINOKAWA1978 Volume 21 Issue 3 Pages 92-95
Published: March 20, 1978
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe temperature effect of sputtering has been studied experimentally for KCl and NaCl single crystals under the bombardment by high density Ar ions of 5 keV from the duoplasmatron source in the range of 20°C to 400°C. The results show a remarkable change in the temperature dependence of sputtering.
The sputtering yield shows no temperature dependence below a critical value, it follows the Arrhenius law with the different activation energy for each specimen. Around the critical temperature Tc, there appears a discontinuity in the slope of the logarithm of sputtering yield. This behavior is interpreted as follows : The sputtering is caused in one way by direct collisions and a cascade process which is insensitive to temperature, and in the other way by creation of defect and its diffusion. This diffusion process gives rise to temperature effect of sputtering. Below Tc the cascade process is dominant, but the diffusion process makes the contribution above Tc. The critical temperature and the activation energy are determined from the experimental results for these specimens.View full abstractDownload PDF (409K)
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