Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 23, Issue 11
Displaying 1-3 of 3 articles from this issue
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  • Electrochromic Properties of an a-WO3 Film and its Application to the Display Devices
    Kenzi MATSUHIRO, Yasushi MASUDA
    1980 Volume 23 Issue 11 Pages 503-514
    Published: November 20, 1980
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.503
    JOURNAL FREE ACCESS
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  • Doping and Adsorption Effects in Amorphous Silicon Prepared by High Pressure rf Sputtering
    Masakuni SUZUKI, Akira NAKAO, Toshikazu MAEKAWA, Minoru KUMEDA, Tatsuo ...
    1980 Volume 23 Issue 11 Pages 515-519
    Published: November 20, 1980
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.515
    JOURNAL FREE ACCESS
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    Substitutional doping was attained by co-sputtering B or P with Si under high Ar gas pressure. Adsorption effects on conductance and ESR were found in doped samples. The changes of conductance and ESR signal due to the adsorption of gases can be consistently explained by the changes of the occupation profile of electrons in the gap states which were caused by electrons or holes donated from adsorbates. Successful substitutional doping and distinct adsorption effects are considered to be due to a relatively small density of localized gap states in those a-Si which were prepared by rf sputtering under high Ar gas pressure.
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  • Si Molecular Beam Epitaxy with Ion Doping
    Hideo SUGIURA, Masafumi YAMAGUCHI
    1980 Volume 23 Issue 11 Pages 520-531
    Published: November 20, 1980
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.23.520
    JOURNAL FREE ACCESS
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    Crystalline quality and dopant control in Si films produced by molecular beam epitaxy with Sb ion doping have been investigated. Stacking fault and dislocation densities decrease with increase in preheating temperature, preheating time, and growth temperature. Major source of the stacking fault and dislocation is both an unevaporated SiO2 on the substrate surface. Stacking fault-free and dislocation-free epitaxial Si films have been grown at the growth temperature of 860 °C on (100) substrate preheated at 1210°C for more than 10 min. Ion doping can control the doping level in the Si films over the range 10151020 cm-3. Arbitrary doping profiles can be produced in the Si films by means of ion doping. All of the Sb atoms doped in the films are electrically active.
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