Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 27, Issue 12
Displaying 1-3 of 3 articles from this issue
  • Kiyomitsu ASANO, Yoji WATANABE, Atsuko EBINA, Tadashi TAKAHASHI
    1984 Volume 27 Issue 12 Pages 881-890
    Published: December 20, 1984
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    An apparatus for measurements of X-ray photoemission spectroscopy (XPS), electron-energy loss spectroscopy (ELS), Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) under ultrahigh vacuum conditions has been constructed in order to investigate the influence of gas exposure on metal-semiconductor interfaces. The interfacial chemical reaction and band bending of the vacuum-cleaved ZnSe (110) surface with adsorbed oxygen during the Schottky barrier formation have been investigated with this setup. When less than a monolayer of Au coverage was deposited on the oxides layers produced by the photoenhanced oxidation method, the removal of SeO2 and breaking of Zn-O bonding were observed at room temperature, leading to the same pinning position of the interface Fermi level as that for the ZnSe (110) -Au interface without intermediate oxides layers. Gold forms homogeneous layers on the oxidized ZnSe (110) surface rather than islands on the atomically clean surface.
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  • Hajime ISHIMARU, Katsuya NARUSHIMA, Hiromi WATANABE, Takashi MOMOSE, H ...
    1984 Volume 27 Issue 12 Pages 891-900
    Published: December 20, 1984
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    All aluminum alloy ultrahigh vacuum system of a beam transport line (350 m long) from 2.5 GeV linac to TRISTAN accumulation ring was completed. Vacuum beam ducts, bellows, fittings, flange/gasket/bolt, nut and washer combinations, feedthroughs, gauges, windows, ion pumps, turbomolecular pumps, all metal valves and related ultrahigh vacuum components are all aluminum alloys. Vacuum beam ducts are joined by fully automatic welding without flanges. The vacuum system is divided by gate valves into 12 sections. Each section is provided with a 30 l/s ion pump and a 50 l/s non-evaporable getter. Base pressure is in the range of 10-6 Pa without baking. Pressure rise due to beam is negligible. Estimated outgassing rate after 11 month evacuation without baking is 6 × 10-9 Pa·m3/s·m2 for the specially extruded beam ducts. The present system satisfied conditions such as high performance, high reliability, simplicity, small size, light weight, low residual radioactivity and low cost.
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  • Tetsuro MATSUDA, Hirohiko NIU, Munezo TAKAI
    1984 Volume 27 Issue 12 Pages 901-904
    Published: December 20, 1984
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The oxidation of evaporated Al thin films on Si (100) was studied by microwave excited oxygen plasma. The effect of oxidation conditions, including the substrate temperature and the substrate-cathode spacing, on the structual characteristics of films was examined. Under an appropriate substrate temperature, amorphous and insulating films were formed.
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