Shinku

The UVSOR Facility at IMS

Makoto WATANABE, Inosuke KOYANO, Kazuhiko SEKI

1985 Volume 28 Issue 10 Pages 729-741
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.729

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Measuring Method and Confirmation of H^-, D^- Ion Current by Sheet Plasma

Joshin URAMOTO

1985 Volume 28 Issue 10 Pages 742-745
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.742

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Usually, it is very difficult to separate an electron current from H^- or D^- ion current under volume production, because both electrons and H^- or D^- ions are extracted from a discharge plasma in H₂ or D₂ gas. However, H^- or D^-ion current by volume production in the sheet plasma can be easily separated from electron current by using the weak magnetic field applied to the sheet plasma itself. Then, if the H^- or D^- ion current is compared with positive ion (mainly H⁺₃ or D⁺₃) current which is extracted by changing sign of the acceleration voltage from plus (for H^- or D^- ion) to minus, the H^-or D^- ion current can be confirmed more exactly.

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Growth of Single-crystal Nb Films

Masanori KOISHI, Gin-ichiro OYA, Yasuji SAWADA

1985 Volume 28 Issue 10 Pages 746-752
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.746

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High-quality single-crystal Nb films with the thickness of 2000Å have successfully been grown epitaxially on single-crystal sapphire (α-Al₂O₃) and MgO substrates by using an electron-beam evaporation technique. High energy electron diffraction and X-ray diffraction studies have indicated that the Nb (100) plane parallel to the Al₂O₃ (1102) and MgO (100) Planes, and the Nb (110) plane parallel to the Al₂O₃ (0001) plane are obtained. The single-crystal Nb films obtained have sufficiently high T_c values and larger resistance ratios (R₃₀₀/R₁₀=20 -200) than the existing Nb films. On the other hand, single-crystal Nb films have failed to grow on single-crystal quartz substrates, and polycrystal Nb films have showed an increase in lattice constant and a decrease in T_c above a substrate temperature of 500°C. Auger electron spectroscopic (AES) analysis has showed that a reactive interdiffusion occurred in an interfacial region between the deposited Nb film and the quartz substrate, which may prevent epitaxial growth of the Nb films.

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Photoluminescence Studies of Thin GaAs Films Grown on GaAs Substrates by an Ion Beam Deposition Technique

Susumu TAMURA, Katsuhiro YOKOTA, Saichi KATAYAMA

1985 Volume 28 Issue 10 Pages 753-758
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.753

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Thin GaAs films were grown epitaxially on Cr doped (100) GaAs wafers by an ion beam deposition technique. Maine missions of the GaAs films prepared with equal As with Ga ion beam currents at a substrate temperature of 550°C were large emissions due to recombination of bound excitons and electron transitions between the conduction band and carbon acceptors. The intensities of these emissions were small on the GaAs films prepared with other preparation conditions. Emissions due to defects caused by the As excess in GaAs were observed on the GaAs films prepared with the As larger than the Ga ion beam currents.

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Development of Laser Diodes by MBE with In-free Substrate Mounting Method

Yuhdzi ISHIDA, Masato MUSHIAGE, Hayami FUKADA, Masayoshi MURANISHI, Ha ...

1985 Volume 28 Issue 10 Pages 759-762
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.759

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GaAs and AlGaAs films were grown by Molecular Beam Epitaxy (MBE) using direct substrate heating instead of conventional In-bonding method. The substrate with IR-absorbing layer was mounted on a hole in a molybdenum-block and heated dilectly by flat heater.
Using this method, self-aligned AlGaAs double-heterostructure lasers were fabricated.
The threshold current of this laser was 40 mA in CW operation at room temperature. The emission wavelength was 780 nm and a fundamental transverse mode oscillation was obtained.

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Fabrication of a-Si : H Thin Films by a Double Tubed Coaxial-line Type Microwave Plasma CVD System

Isamu KATO, Motoyasu YANO, Yusuke KOHYAMA

1985 Volume 28 Issue 10 Pages 763-767
Published: October 20, 1985
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.28.763

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This study was concerned with the fabrication of a-Si : H thin films by a double tubed coaxial-line type microwave plasma CVD system. The cw microwave of 60 W and pulsed microwave, of which the average power is 60 W and the duty ratio is 1/5, are used. The deposition rate is 0.1 to 7Å/s dependent on the substrate position from the discharge tube end. The optical energy band gap is 1.7 to 1.9 eV.
The boundary layer between the plasma region excited by the microwave power and the after-glow region created spatially have been estimated by using the experimental results of the dependence of the deposition rate and the optical energy band gap on the substrate position. In the case of cw microwave, the boundary layer is about 3 cm from the discharge tube end and in the case of pulsed microwave, that is about 10cm. In the spatially after-glow region, satisfactory thin films are fabricated without a plasma bombardment.

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