Shinku

Trend and Present Status of Materials Processing Experiments in Space

Shigeru MAEKAWA

1987 Volume 30 Issue 2 Pages 45-53
Published: February 20, 1987
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.30.45

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Volume Produced H^-, D^- Ion Source for Proton Accelerator and Theromo-Nuclear Fusion Research by Sheet Plasma (II)

Joshin URAMOTO

1987 Volume 30 Issue 2 Pages 54-59
Published: February 20, 1987
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.30.54

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By increasing thicknesses of multi-aperture electrodes to extract volume produced H^-, D^- ions in the sheet plasma, electron currents accelerated with H^-, D^- ions, are reduced around 10% compared with the H^-, D^- ion current (in a current density of 2030 mA/cm² over a large area). Meanwhile, a total heat load of extraction electrodes is also reduced effectively : for an example, around a power density of 100 W/cm² for a H^- ion current of 190 mA from an area of 13 cm² with 6 mmφ × 25 apertures (7 cm²) or, for a H^- ion current density of 27 mA/cm² in transparency 54%.

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Synthesis of Diamond Thin Films by Atmospheric-Pressure Thermal Chemical Vapor Deposition and Their Characterization

Yoichi HIROSE, Yuki TERASAWA, Kazuya IWASAKI, Katumi TAKAHASHI, Kazuo ...

1987 Volume 30 Issue 2 Pages 60-68
Published: February 20, 1987
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.30.60

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Diamond thin films have been formed by atmospheric-pressure thermal chemical vapor deposition (atmosphric-pressure CVD) using organic compounds such as CH₃OH, CH₃COCH₃ and CH₃CHO. These organic compounds contain the combination of C, H and O. The films are grown on the silicon substrates with high growth rate (8-10 μm/hr) at atmospheric pressure. This growth rate is 10 times faster than the CVD method using hydrocabons such as CH₄ and C₂H₂. The films have good crystallinity and high quarity without graphitic and amorphous carbon in the sense of electron diffraction and Raman spectrum. It is considered that methyl radical (CH₃) and atomic hydrogen (H) play important roles in the synthesis of the diamond.

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Dependence of Deposition Conditions on Amorphous SiC : H Thin Films Prepared by Magnetron Sputtering Method Using CH₄

Nobuo SAITO

1987 Volume 30 Issue 2 Pages 69-79
Published: February 20, 1987
Released on J-STAGE: October 20, 2009

DOIhttps://doi.org/10.3131/jvsj.30.69

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Amorphous SiC : H alloy films were prepared by magnetron sputtering of silicon in methane-argon gas mixtures.
The influence of the deposition conditions, such as rf power (50-200W), sputtering pressure (4-70 mTorr), and substrate temperature (300-450°C) on the properties of the prepared films were extensively investigated. With decreasing rf power below 100 W or increasing sputtering pressure above 30 mTorr, the optical band gap and the activation energy of dark conductivity increased accompanied by an increase of the amount of Si-C bond. Moreover, it was found that the dark conductivity as well as the photoconductivity increased with increasing rf power, and they revealed the maxima at 10 mTorr in sputtering pressure. Several characteristics concerning the preferential attachment of hydrogen to carbon, and the conduction band tail width were also examined, and were discussed from the standpoint of the structural and compositional change of the films correlating with deposition conditions.

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