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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 39, Issue 10
Displaying 1-3 of 3 articles from this issue
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  • Gas Cluster Ion Beams : Their Formation and Applications
    Isao YAMADA
    1996 Volume 39 Issue 10 Pages 481-487
    Published: October 20, 1996
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.39.481
    JOURNAL FREE ACCESS
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  • Quantitative Evaluation of Outgassing from Turbomolecular Pumps
    (1) -Theoretical Analysis
    Kenji ODAKA
    1996 Volume 39 Issue 10 Pages 488-496
    Published: October 20, 1996
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.39.488
    JOURNAL FREE ACCESS
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    The influence of outgassing from a turbomolecular pump (TMP) on the pumping speed was investigated theoretical-ly. The investigation was based on a combination of the transmission probabilities of the gas through blade rows with outgassing from every part of the TMP. A new formulation was derived for evaluating pressure from the intrinsic pumping speed and the outgassing rate of the TMP. This formulation clarified the physical meaning of the conventional pumping speed. Several of the principal quantities used in conventional methods of pumping speed evaluation can be used with the new formulation. A method was also developed for measuring outgassing rate of TMP. This method enables quantitative evaluation of the influence of materials, surface treatments, and configurations of TMP on the pumping speed. The high accuracy of pressure evaluation by the new method facilitated the selection of the appropriate size of pump for a vacuum system.
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  • Etching Effect of Native Oxide on the Fine Contact Hole Using Soft Etching Process by Ar Ions
    Hirofumi SUMI, Toshiharu YANAGIDA, Yukiyasu SUGANO, Satoru KISHIDA, He ...
    1996 Volume 39 Issue 10 Pages 497-503
    Published: October 20, 1996
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.39.497
    JOURNAL FREE ACCESS
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    An anisotropic inductive coupled plasma (ICP) soft etching using high-density Ar plasma and low incident energy, generally performed before metallization of interconnection, and which can uniformly remove the native oxide at the bottom of fine contact holes, is introduced. As a result, excellent ohmic characteristics can be achieved using ICP soft etching. A cross-sectional TEM (Transmission Electron Microscopy) -EELS (Electron Energy Loss Spectroscopy) was performed in order to compare interface layer generation at the contact hole in the ICP system with that generated in standard RF (Radio Frequency) diode etching. In the sample treated by ICP soft etching, reacted Ti silicide was observed at the bottom of the contact holes. Furthermore, the formation mechanism of stable ohmic contacts was theoretically analyzed using a Monte-Carlo topological simulation. From the results, we found that it is possible to prevent rem-iner denosition on the bottom of holes with 0.1μm diameter.
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