All issues
Volume 44, Issue 8
Displaying 1-11 of 11 articles from this issue
- |<
- <
- 1
- >
- >|
-
Takeo HATTORI2001 Volume 44 Issue 8 Pages 695-700
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (889K) -
Hiroyuki KAGESHIMA, Kenji SHIRAISHI, Masashi UEMATSU2001 Volume 44 Issue 8 Pages 701-706
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (836K) -
Akira KUROKAWA2001 Volume 44 Issue 8 Pages 707-714
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1018K) -
Kensuke TAKAHASHI, Tomohiro NAKAMURA, Hiroshi NOHIRA, Kazuyuki HIROSE, ...2001 Volume 44 Issue 8 Pages 715-719
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (698K) -
Kouichi MURAOKA, Akira TORIUMI2001 Volume 44 Issue 8 Pages 720-725
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (897K) -
Isamu SATO2001 Volume 44 Issue 8 Pages 726-732
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1313K) -
Kazuhiro HOSHINO2001 Volume 44 Issue 8 Pages 733-739
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThis paper reports the relationship between film characteristics and electromigration resistance of AlCu interconnects made by AlCu alloy films deposited by reflow-or high temperature sputtering on a sputtered-Ti/CVD-TiN/CVD-Ti, which is insufficient to obtain electromigration-resistant Al (111) texture. Using reflow Al process, the Al surface morphology was greatly improved in comparison with hot sputtering. Furthermore, Si addition into AlCu alloy was effective to improvement of Al (111) texture on the CVD-TiN. The improved process of reflow AlCu interconnects showed the same strong resistance to electromigration as that of hot sputtered AlCu interconnects.View full abstractDownload PDF (1491K) -
Masatsugu ARAI, Yasuhiko SASAKI, Akiomi KOUNO, Teruo KOBAYASHI, Yoshim ...2001 Volume 44 Issue 8 Pages 740-746
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDeuterium permeabilities through stainless steel diaphragms were measured. The diaphragms were oxidized 316L (100 μm), Au-plated 316L (Au (13 μm) /316L (100 μm) /Au (13 μm), Au (1 μm) /316L (100 μm)), and Al-laminated 316L (316L (50 μm) /Al (10 μm) /316L (50 μm)). A hydrogen permeation measurement system composed of vacuum chambers, a mass analyzer, and vacuum pumps was used. Hydrogen permeabilities through the diaphragms were found to be dominated by diffusion. Deuterium permeability through oxidized 316L decreased to 1/4 when the Cr content of the surface increased. However, the oxidized 316L was not an effective hydrogen penetration barrier. The deuterium permeabilities through Au-plated and Al-laminated 316L were 1/50-1/100 of that for 316L. It was found that the hydrogen permeability through Au-plated and Al-laminated 316L could be calculated from the permeability of Au and Al, because the permeability in the stainless steel is greater than those in Au and Al.View full abstractDownload PDF (879K) -
Tadashi ISHIDA2001 Volume 44 Issue 8 Pages 747-750
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe self bias voltages of the target in RF sputtering were measured, and a method of controlling self bias voltages is proposed to lower the resistivity of ITO films.
Using this method, the resistivities of the ITO films on glass at 200°C prepared by RF magnetron sputtering of a 98.6%density target under the total pressure 1.3 Pa of Ar containing 0.03%O2 partial pressure ratio were 1.9×10-4 Ω·cm uniformly on the glass. The values of the self bias of the target in RF sputtering were found that they are changed by the total pressure, the distance between the target and the glass and so on. And the reason for the change is explained.View full abstractDownload PDF (515K) -
Ryu TANIKAWA, Nozomu KAWAI, Takako HAYASHI, Tsuyoshi MITSUI, Toshio UR ...2001 Volume 44 Issue 8 Pages 751-754
Published: August 20, 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSCascade Static Lens gauge (CSL gauge) is an ionization vacuum gauge that aims at a measurement of total pressure in extremely high vacuum region with high sensitivity by many repetition times of electrons. The experimental sensitivity of the CSL gauge depending on the filament position was investigated, and the optimum position was found. Computer simulation study of electron trajectories with the space charge has been carried out, and it was found that the repetition times of electrons had a same tendency to the experimental sensitivity.View full abstractDownload PDF (556K) -
2001 Volume 44 Issue 8 Pages 780
Published: 2001
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (78K)
- |<
- <
- 1
- >
- >|