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Volume 47, Issue 4
Displaying 1-13 of 13 articles from this issue
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Masahide SATO, Makio UWAHA2004 Volume 47 Issue 4 Pages 292-300
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
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Yuden TERAOKA, Akitaka YOSHIGOE, Kousuke MORITANI2004 Volume 47 Issue 4 Pages 301-307
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
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Time-resolved Two-photon Photoelectron Spectroscopy StudyShin-ichiro TANAKA, Katsumi TANIMURA2004 Volume 47 Issue 4 Pages 308-314
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
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Masahiro NUNOSHITA, Jun OHTA, Motoki OKINAKA2004 Volume 47 Issue 4 Pages 315-323
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSNovel GeC epilayers on Si (001) substrates were grown by using a molecular beam epitaxy (MBE) with a vacuum arc plasma gun as a new-type C source for a first time. To improve crystallinity and obtain a higher substitutional C content x in the Ge1-xCx epilayers, dependence of the growth mode and C incorporation upon the supplied C fraction and growth temperature was investigated systematically by reflection high-energy electron diffraction, X-ray diffraction and Raman spectroscopy analyses. Further, an effect of Ar+ ion irradiation on substitutional C incorporation into the MBE-grown GeC /Si (001) epilayers was clarified. As the result, the maximum value of x= 2.9% was obtained in a singlecrystalline structure. From measuring the optical absorption spectra with FT-IR, it was found out that the Get1-xCx/Si (001) epilayers with 0≤x≤2.0% have an indirect transition-type band structure and a very large bandgap bowing parameter b= 13.4 eV.View full abstractDownload PDF (1597K) -
Kazuhiro NAKAMURA, Hirofumi SHIMIZU, Katsuhiro YOKOTA2004 Volume 47 Issue 4 Pages 324-327
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA modified RCA cleaning method was employed for cleaning silicon substrates before silicon molecular beam epitaxy (MBE) growth. Three kinds of wet chemical processes using the conventional SC1 and SC2 solutions were employed in this study. The type of the solution and/or the dipping time at the final step of the wet chemical process was changed. When the cleaning process was ended with SC 1 solution, thermal cleaning temperature (Ttc) of 800°C was required to obtain a smooth surface of the silicon substrate. On the other hand, when it was ended with SC2 solution, a smooth surface was successfully obtained even at Ttc 690°C. SC2 was a preferable solution at the final step of the modified RCA cleaning method for lowering Ttc, and the roughness became smaller with increasing the dipping time in the final SC2 solution.View full abstractDownload PDF (485K) -
Toshiyuki OISHI, Naruhisa MIURA, Muneyoshi SUITA, Takuma NANJO, Yuji A ...2004 Volume 47 Issue 4 Pages 328-333
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSZn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2×1013Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.View full abstractDownload PDF (671K) -
Kazuhiko MASE, Eiichi KOBAYASHI, Masanobu MORI, Yoshiharu KOBAYASHI, S ...2004 Volume 47 Issue 4 Pages 334-338
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSWe have developed a miniature cylindrical mirror electron energy analyzer (CMA) with a diameter of 26 mm. The CMA consists of a shield for electric field, inner and outer cylinders, a pinhole, and an electron multiplier. By assembling the CMA in a coaxially symmetric mirror electron energy analyzer (coASMA) coaxially and confocally we developed an analyzer for Auger-photoelectron coincidence spectroscopy (APECS). The performance was tested by measuring Si LVV Auger-Si 2p photoelectron coincidence spectra of a Si (111) surface. Features of the APECS analyzer are as follow. 1) The coincidence signal detection efficiency of the analyzer is improved by one order of magnitude from previous ones because of the large solid angle of the coASMA and the CMA. 2) The positioning is quite easy, because the coASMA and the CMA are assembled confocally on a rod with a mechanism for xyz positioning and tilt adjustment. 3) It can be installed to a general purpose ultrahigh vacuum chamber because it is constructed on a 203-mm-outer-diameter conflat flange with a 50-mm-retractable mechanism. 4) The production cost is low because the structure is simple and the number of the parts is relatively small.View full abstractDownload PDF (1166K) -
Daiji NISHIZAWA, Michikazu KINSHO, Kenichiro KANAZAWA, Norio OGIWARA, ...2004 Volume 47 Issue 4 Pages 339-343
Published: April 20, 2004
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSCylindrical beam ducts with large aperture (φ200 mm) made of alumina ceramics are used in the 3 GeV-synchrotron of Japan-Proton Accelerator Research Complex (J-ARC). A longer ceramic beam duct with about 3500 mm long is indispensable to the bending magnet sections. A beam duct is manufactured in such a way that several unit ducts of which length is from 500 mm to 1000 mm are connected by metallizing and glazing. It is very important to evaluate roundness and straightness of unit ceramic ducts because we have to keep a large beam aperture and have to compensate for the contact area of unit ducts to be large.
We developed an apparatus for measuring roundness and straightness using two digital micro gauges, and we completed the algorithm to evaluate roundness and straightness from measured data by use of “Excel worksheet”. We have evaluated these form deviations of fifteen ceramic unit ducts. The unit ducts have been manufactured with sintering, the obtained roundness and straightness are several hundred microns and about 200μm1000μm respectively with no polishing. The roundness of unit ducts increases proportional to the oblateness of the ducts.View full abstractDownload PDF (771K) -
2004 Volume 47 Issue 4 Pages 344a
Published: 2004
Released on J-STAGE: October 20, 2009
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2004 Volume 47 Issue 4 Pages 344b
Published: 2004
Released on J-STAGE: October 20, 2009
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2004 Volume 47 Issue 4 Pages 344c
Published: 2004
Released on J-STAGE: October 20, 2009
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2004 Volume 47 Issue 4 Pages 344d
Published: 2004
Released on J-STAGE: October 20, 2009
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2004 Volume 47 Issue 4 Pages 344e
Published: 2004
Released on J-STAGE: October 20, 2009
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