Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 46, Issue 6
Displaying 1-10 of 10 articles from this issue
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  • The Study of Charging for Au/Cr/SiO2 Interface in Depth Profiling in XPS
    Yukimasa MORI, Masaki TANEMURA, Sakae TANEMURA
    2003 Volume 46 Issue 6 Pages 491-496
    Published: June 20, 2003
    Released on J-STAGE: January 30, 2010
    DOIhttps://doi.org/10.3131/jvsj.46.491
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    Charging in depth profiling in X-ray photoelectron spectroscopy (XPS) for metal layers on insulated substrates (Au/Cr/SiO2 (Quartz)) was studied. In the depth profiling using a neutralizer, differential charging was observed at the Cr/ SiO2 interface by conducting the sample to the analyzer. This charging should be strongly related with the change of the surface morphology from Cr “layer” to “islands” on SiO2 substrate during sputtering. In the insulated case from the analyzer, almost no differential charging was observed at the Cr/SiO2 interface. This is quite helpful for the identification of chemical state at the metal/insulator interface. Thus, it is concluded that the depth profiling in XPS for metal layers on insulated substrates required a uniform surface potential at the metal/insulator interface during sputtering by insulating the sample from analyzer.
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  • Carbon Nanotube Bridges between Metal Nanoparticles Synthesized by Thermal Chemical Vapor Deposition
    Norihiro YAMAUCHI, Takashi IKUNO, Shigeharu OHKURA, Shin-ichi HONDA, M ...
    2003 Volume 46 Issue 6 Pages 497-500
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.497
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    We synthesized carbon nanotube (CNT) bridges between Fe nanoparticles by low pressure thermal chemical vapor deposition using etylene gas. At low temperatures, randomly oriented CNTs were dominantly grown with increasing gas pressure. By optimizing the growth conditions, horizontally oriented straight CNTs bridged between Fe particles were obtained under a low pressure of 100 Pa.
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  • An STM Observation of Bi-nanowire Growth on the Si (100) Surface
    Shinji OHGAKI, Motoki TAKEI, Masamichi NAITOH, Satoshi NISHIGAKI, Nobu ...
    2003 Volume 46 Issue 6 Pages 501-504
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.501
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    Bi atoms deposited on the Si (100) surface at temperatures higher than 400°C, form one-dimensional wires consisting of two chains of Bi dimers in the topmost layer. The dynamic process of Bi-nanowire formation has been investigated by scanning tunneling microscopy (STM) by performing in-situ observations at elevated temperatures. From the consecutive STM images taken after Bi deposition on the surface, we found that Bi-nanowires are formed by expelling atoms that compose an upper terrace at the front of Bi-nanowire growth. When Bi-nanowires are formed toward a lower terrace approaching its step edge, peninsulas are newly formed near the wires.
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  • STM and LEED Analysis of Reconstructions on the 6H-SiC (0001) Surface
    Masatoshi KITADA, Masamichi NAITOH, Satoshi NISHIGAKI, Naotake TOYAMA, ...
    2003 Volume 46 Issue 6 Pages 505-508
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.505
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    We report results of an investigation in the initial process of graphitization on 6H-SiC (0001) surfaces using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). There appeared (3 × 3) and (2 × 2) periodicities in the STM images of the 6H-SiC (0001) surface annealed at 950 and 1000°C, respectively. After annealing the 6H-SiC (0001) surface above 1300°C, many large and small domains with various periodicities were observed in the STM image. This STM image can be explained as Moiré patterns due to different combinations of two graphite layers. In consistent with the STM result, azimuthally-rotated graphite (1 × 1) spots were observed in a LEED pattern, where brightest parts in the diffraction ring define combination of two hexagonal lattices of graphite.
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  • Nanotribological Property of Boron Nitride-Copper Complex Films
    Masahiro GOTO, Akira KASAHARA, Masahiro TOSA
    2003 Volume 46 Issue 6 Pages 509-511
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.509
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    Boron nitride-copper complex films were synthesized on stainless steel substrates by magnetron co-sputter depositon method. Internal stress was observed with film deflection method. Surface topographical image and nanotribological property were measured by atomic force microscopy and lateral force microscopy, respectively. Nano aggregates grew on the film surface after annealing at 473 K in a vacuum, which is triggerd by internal stress. Frictional property of the films were drastically changed with the temperature of heat treatment in a vacuum. Friction coefficients as low as 0.1 under a vacuum condition were achieved after annealing at 673 K.
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  • Amorphous SiCS : H Films Prepared by Magnetron Sputtering of Si in CH4 and H2S
    Nobuo SAITO, Isamu NAKAAKI, Hiromu IWATA, Tomuo YAMAGUCHI
    2003 Volume 46 Issue 6 Pages 512-515
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.512
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    Amorphous SiCS : H films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH4 and H2S gas mixtures. The effects of H2S partial pressure ratio R on the optical and electrical properties of the films were investigated.
    With increasing R, sulfur-related bonding configuration can be observed in IR spectra. Both the dark and photo conductivity increase by about two orders of magnitude with increasing R, whereas the optical bandgap decreases slightly. These data imply that S atoms may act as dopants. Moreover, the incorporated S atoms may contribute to relax the disordered structure of undoped films.
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  • Surface Charging on High-power rf Windows by UV Irradiation
    Shinichiro MICHIZONO, Yoshio SAITO
    2003 Volume 46 Issue 6 Pages 516-519
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.516
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    Alumina rf windows are used at high-power rf sources, such as klystrons. The breakdown of rf windows takes place due to multipactor and flashover events on the alumina surface. Both multipactor and surface flashover have relation to the primary electron emission sites, such as the peripheral region of the alumina (the triple junction) and defects on the surface. Photoelectrons induced by ultraviolet light (UV) were emulated as primary electrons. The cathodoluminescence spectra during rf operation and the surface potential profile afterwards the rf were measured and investigated.
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  • Bi2Sr2Can-1CunOy Films Sputtered on Substrates of Bi2Sr2CuOy Single Crystals
    Koji KATSURAHARA, Mitsuru OGURA, Kosuke MATSUMOTO, Naoki FUJIWARA, Hir ...
    2003 Volume 46 Issue 6 Pages 520-523
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.520
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    We prepared Bi2Sr2CaCu2Oy (Bi-2212) films on substrates of Bi2Sr2CuOy (Bi-2201) single crystals by a rf magnetron sputtering method, where He and O2 mixture sputtering gas and an off-axis geometry were used. The EPMA measurement indicated that the films deposited on the Bi-2201 single crystal had approximately the same composition as those on MgO substrate, which showed a Bi-2212 single-phase.
    The film deposited on the Bi-2201 single crystal post-annealed at 500°C for 0.5 h showed a metallic temperature dependent resistance in the normal state and the superconducting transition (Tconset) of about 80 K. Therefore, the Bi-2212 films are considerate to grow on the substrate of the Bi-2201 single crystal.
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  • Property of Solid Oxide Fuel Cell Having a Thin YSZ Electrolyte Film Grown on Porous Ni-YSZ Cermet Anode by RF Magnetron Sputtering
    Tomoya KAKEYAMA, Akiyoshi NAGATA
    2003 Volume 46 Issue 6 Pages 524-528
    Published: June 20, 2003
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.46.524
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    Solid oxide fuel cell (SOFC) having a thin yttria stabilized zirconia (YSZ) electrolyte film was prepared on the anode electrode of a porous Ni-YSZ cermet substrate by the RF magnetron sputtering growth. The constitutional YSZ films were characterized based on dependence on the substrate temperature and sputtering time. A thin YSZ film grown at substrate temperature of 400°C indicated a crystal structure similar to the bulk electrolyte one by the diffusion growth in the film and conductivity of the film also increased with increasing substrate temperature. Terminal voltage at 1000°C of an SOFC having thin YSZ film with 9 decreased with operating time, because YSZ electrolyte was deformed to crystal structure with many pores by the thermal energy of the operating temperature.
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  • [title in Japanese]
    [in Japanese]
    2003 Volume 46 Issue 6 Pages 529-535
    Published: June 20, 2003
    Released on J-STAGE: January 30, 2010
    DOIhttps://doi.org/10.3131/jvsj.46.529
    JOURNAL FREE ACCESS
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