ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
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23.43
Displaying 1-12 of 12 articles from this issue
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  • [title in Japanese]
    Article type: Cover
    Pages Cover1-
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_Cover1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Index
    Pages Toc1-
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_Toc1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • Optical Property of Linear Polarizer
    Hidehiro Seki, Taketoshi Uwano, Tatuso Uchida
    Article type: Article
    Session ID: IDY99-232
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_1
    CONFERENCE PROCEEDINGS FREE ACCESS
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    Reflective color LCDs are important key devices in future information oriented society. High utilization efficiency of ambient light for bright display is needed for design of the reflective mode. In transmissive mode, the brightness can be easily controlled by backlight. However, the light intensity of the reflective mode is limited within the ambient light. The loss of the incident light in the reflective mode results in darkening the LCD panel. It is a important point of the reflective display to increase the brightness as high as possible. In order to improve the efficiency, the property of a polarizer is discussed and the guideline is presented.
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  • Holographic Diffusive Reflectors for Reflective Color LCDs
    Terutaka Tokumaru, Ken-ichi Iwauchi, Yoshiyuki Higashigaki
    Article type: Article
    Session ID: IDY99-233
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_7
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A diffusive color reflector using volume hologram was examined to implement a diffusive reflector to be employed in reflective color LCDs, with high brightness due to gain reflection and with high color purity and high light efficiency. In holographic exposure experiment a micro-lens-array was introduced to generate object lights and to define an abrupt gain profile and to control the magnitude of the angular profile. The DuPont materials were used to obtain high color purity of reflection lights. The high light efficiency was realized by broadening the reflection width to the value of about 100 nm under an optimized color tuning process.
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  • Influence of Ions on Frequency Dependence of Optical Threshold Voltage in TN LCDs
    Hiromoto Sato, Yuji Nakazono, Atsushi Sawada, Shohei Naemura
    Article type: Article
    Session ID: IDY99-234
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_13
    CONFERENCE PROCEEDINGS FREE ACCESS
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    The optical threshold voltage of TN cells containing mobile ions in the LC layer was being examined in a low frequency region. The voltage was investigated from the view point of effective voltage applied to the LC layer. The consideration of the microscopic internal field influenced by ions makes it possible to explain the frequency dependence of optical threshold voltage very well.
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  • Electrical Characteristics of Spindt-type Mo FEA Devices Varied With Tip-Height
    Y-C. Luo, M. Shibata, H. Okada, H. Onnagawa
    Article type: Article
    Session ID: IDY99-235
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_19
    CONFERENCE PROCEEDINGS FREE ACCESS
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    Electrical characteristics of Spindt-type Molybdenum(Mo)field emitter array(FEA)devices varied with emitter tip-height have been studied based on device modeling and experiment. Potential and electric field distributions varied with the emitter tip-height were simulated. It is observed that the electric field strength near the top of the tip varied with emitter tip-height. Especially, the electric field strength of the top of the higher emitter tip was largely affected with the anode-gate distance and the anode voltage compared to conventional FEA device. Experimental results varied with differnt tip-height were in good agreement with that of calculation results.
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  • An Oxide Cathode with Tungsten-film Coating
    Hiroyuki Teramto, Masato Saito, Takuya Ohira, Shoyu Watanabe, Takashi ...
    Article type: Article
    Session ID: IDY99-236
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_25
    CONFERENCE PROCEEDINGS FREE ACCESS
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    The improved Sc_2O_3-dispersed-oxide-cathode with Tungsten-Film Coating has been developed. The capability of new cathode for high current density operation is as high as 1.5 times that of conventional Sc_2O_3-dispersed-oxide-cathode. Ni and W interdiffuse and form a fine-grained and uneven Ni-W layer. This structure increases the opportunity for reaction. Sufficient free Ba is also formed within this structure. Ba_2SiO_4(an insulator)is dispersed in the Ni-W layer. As a result, Si, Mg and W of the proper quantity in the Ni-W layer seem to contribute to free Ba production during long operation.
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  • Low temperature operating HIP cathode
    Toshikazu Sugimura, Maki Narita
    Article type: Article
    Session ID: IDY99-237
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_31
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We have developed "Low temperature operating HIP cathode", and put it practical use. A sintered cathode have never succeeded, but this new cathode, which has good features both from a oxide cathode and from a dispenser cathode, was achieved by improving the sintered cathode. Low temperature operating HIP cathode has realized the emission life of 3A/cm^2-20, 000h without emission degradation at 780℃. In the stage of making cathode structure, the carbonate emitter doesn't change, but after inserted into a CRT in the cathode decomposition process, it changes to an oxide emitter. For this reason, low temperature operating HIP cathodes can be introduced into the usual CRT production line without additional plant investment.
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  • Optimaization of preparing conditions of high-luminance TFEL devices using Ga_2O_3:Mn thin films prepared by magnetron sputtering
    Toshihiro MIYATA, Toshikuni NAKATANI, Tadatsugu MINAMI
    Article type: Article
    Session ID: IDY99-238
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_37
    CONFERENCE PROCEEDINGS FREE ACCESS
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    High-luminance green-emitting TFEL devices have been fabricated using a Ga_2O_3:Mn phosphor thin-film emitting layer and a thick BaTiO_3 ceramic sheet insulating layer. The EL characteristics of TFEL devices with a Ga_2O_3:Mn phosphor thin-film emitting layer prepared by rf magnetron sputtering were strongly dependent on the preparing conditions of Ga_2O_3:Mn thin-film. A luminance of 7.54cd/m^2 was obtained in a green-emitting TFEL device with an as-deposited Ga_2O_3:Mn phosphor thin-film emitting layer prepared at substrate temperature of 365℃. High luminaces of 627 and 167 cd/m^2 were obtained in a device using Ga_2O_3:Mn phosphor thin-film postannealed at 1020℃ and prepared at substrate temperature of 390℃, when driven at 1kHz and 60Hz, respectively.
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  • Blue emitting phosphors CaAl_2O_4:Eu^<2+> for PDP Applications
    Ikuo Ozaki, Kazuaki Okamoto, Takashi Kunimoto, Koutoku Ohmi, Shosaku T ...
    Article type: Article
    Session ID: IDY99-239
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_43
    CONFERENCE PROCEEDINGS FREE ACCESS
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    BaMgAl_<10>O_<17>:Eu^<2+>(BAM:Eu^<2+>)is currently used for a plasma display panel(PDP)blue phosphor. However the intensity of blue emission is decreased by the thermal treatment for the panel production and by VUV irradiation and ion bombardment for driving the panels. We propose a blue PDP phosphor CaAl_2O_4:Eu^<2+>(CA:Eu^<2+>)which is thought to be chemically stable than BAM:Eu^<2+>. CA:Eu^<2+> phosphor shows a pure blue emission under 147 nm excitation. The photoluminescence(PL)intensity of CA:Eu^<2+> is about 12% of that of BAM:Eu^<2+>. After annealing at 600℃, the PL luminance of CA:Eu^<2+> can be kept at 93% of the initial luminance.
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  • Calculation of the Secondary Electron Yield γ of Insulator for PDP Cathode
    Yasushi Motoyama, Mizumoto Ushirozawa, Hideomi Matsuzaki
    Article type: Article
    Session ID: IDY99-240
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_49
    CONFERENCE PROCEEDINGS FREE ACCESS
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    The secondary electron yield γ of the Plasma Display Panel(PDP)cathode is an important research object because of its close relationship to the discharge voltages etc. In this study, the value of γ in the insulator and semiconductor without impurity levels was calculated from Hagstrum's theory. The results clarified the relation between γ and the ionization energy, excitation energy, electron affinity, forbidden bandwidth and valence bandwidth. The values for γ of Ge, Si, MgO and BaO with ions, metastable atoms of He, Ne, Ar, Kr, and Xe were also calculated. The calculated value of γ for MgO for PDP was compared with experimental results. This study should serve to provide a useful guideline for searching the cathode material for PDP.
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  • [title in Japanese]
    Article type: Appendix
    Pages App1-
    Published: July 09, 1999
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.23.43.0_App1
    CONFERENCE PROCEEDINGS FREE ACCESS
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