ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
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25.28
Displaying 1-19 of 19 articles from this issue
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  • [title in Japanese]
    Article type: Cover
    Pages Cover1-
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_Cover1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Index
    Pages Toc1-
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_Toc1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • CMOS Linear Autofocus Sensor for 7-point Wide Area Autofocus System
    Hidekazu Takahashi, Yuichiro Yamashita
    Article type: Article
    Session ID: IPU2001-17/CE2001-1
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_1
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A new CMOS linear autofocus sensor has been developed for 7-point wide area autofocus system of Canon's EOS Kiss III and EOS 7SLR cameras. Sensor signal of high signal-to-noise ratio, wide dynamic range and auto gain control of high precision have been realized by its pixel level unity gain amplifier and feedback-clamp noise reduction circuitry. Reductions of size and cost have also been achieved by peripheral circuits integration and COB package.
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  • A CMOS 3-D Vision Sensor
    Shinichi Yoshimura, Toshinobu Sugiyama, Kazuya Yonemoto, Kazuhiko Ueda
    Article type: Article
    Session ID: IPU2001-18/CE2001-2
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_7
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A CMOS image sensor with capabilities of real-time 3-D sensing, motion detection and digital image output is developed. It has 192 x 124 pixels, and each pixel consists of 4 current copier cells as frame memories and a chopper comparator for signal processing. The sensor focuses on a temporal response of illumination during exposure. The maximum data rate is 6.25MHz at 48kframes/s operation. The depth resolution of 500um is achieved at 24kframes/s, and 12b maximum image resolution is realized at 48kframes/s. This sensor is fabricated with 0.35μm standard CMOS technology.
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  • An image sensor using SiGe BiCMOS process
    Naoyuki Tokida, Takashi Tokuda, Jun Ohta, Masahiro Nunoshita
    Article type: Article
    Session ID: IPU2001-19/CE2001-3
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_13
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We have demonstrated an image sensor using SiGe BiCMOS fabrication process for detecting object illuminated by light in "eye-safe"band. The process is general SiGe BiCMOS process for RF application. An image sensor with 32x32 pixels have been fabricated using a photo-transistor as a detector, which of the base is SiGe layer. Fundamental device characteristics have been demonstrated.
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  • High-Sensitivity, No-Crosstalk Pixel Technology for Embedded CMOS Image Sensor
    M Furumiya, H Ohkubo, Y Muramatsu, Y Kurosawa, Y Nakashiba
    Article type: Article
    Session ID: IPU2001-20/CE2001-4
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_19
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A high-photosensitivity and no-crosstalk pixel technology has been developed for and embedded active-pixel CMOS image sensor using a 0.35-μm CMOS logic process. To increase photosensitivity, we developed a deep low-concentration p-well(deep p-well)photodiode. To suppress pixel crssstalk caused by obliquely incident light, a double-metal photoshield was used. The crosstalk caused by electon diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-inch 330k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nm incident light was obtained.
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  • A High-Sensitivity, Digital CMOS Image Sensor Using Oversampling Signal Processing
    Shoji Kawahito, Nobuhiro Kawai, Yoshiaki Tadokoro
    Article type: Article
    Session ID: IPU2001-21/CE2001-5
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_25
    CONFERENCE PROCEEDINGS FREE ACCESS
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    This paper presents a methods for realizing a high-sensitivity image sensor using frame oversampling and noise suppuression. The use of frame oversampling allows to use a high gain column amplifiers to reduce the noise for the analog circuits in front of A/D converters and the quantization noise. One of the proposed methods uses a digital domain canceling of the fixed pattern noise and the reset noise. As a result of this canceling, the other random noise components are shifted to higher frequency. Using a digital filter, the shifted noise is filtered out, resulting the improvements of SNR over CCD.
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  • A Signal-Processing CMOS Image Sensor using a Simple Analog Operation
    Yoshinori Muramatsu, Susumu Kurosawa, Masayuki Furumiya, Hiroaki Ohkub ...
    Article type: Article
    Session ID: IPU2001-22/CE2001-6
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_31
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We have developed a CMOS image sensor with a normal mode and three signal-processing function modes. Small pixel size and real-time operation are achieved by using a four-transistor and one-capacitor pixel sheme and column-parallel on-chip analog operation. The chip includes 512(H)×384(V)effective pixels fabricated with a 0.35-μm CMOS process. Each pixel has a sufficient fill factor of 24% in and area of 9.3 x 9.3 μm^2. The dynamic range at the wide dynamic-range mode was a miximum 97 dB. The chip consumes 79mW, and the GCA and 8-bit ADC operate at 46 fps using a 3.3-V single power supply.
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  • A 3.25M-pixel APS-C size CMOS Image Sensor
    Shunsuke Inoue, Katsuhito Sakurai, Isamu Ueno, Toru Koizumi, Hiroki Hi ...
    Article type: Article
    Session ID: IPU2001-23/CE2001-7
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_37
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A 3.25 M-pixel CMOS Image Sensor has been developed for a digital SRL camera system. A pixel is 10.5um sq. and consists of a buried-type photodiode and four transistors. A perfect charge transfer structure and column-to-column noise cancellation circuit enable reduction of pixel reset noise and fixed pattern noise. A 0.35um 1poly-3metal CMOS technology with additional photodiode fabrication process has been employed. The dark current density is 60pA/cm2(@60℃), random noise is 0.27 mVrms and the power consumption is 250mW.
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  • Development of Super High Resolution Security Camera System
    Tetsuo MISE, Yukio MORI, Seiji OKADA, Haruhiko MURATA, Eiichiro AZUMA
    Article type: Article
    Session ID: IPU2001-24/CE2001-8
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_43
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We have developed digital signal processing algorithms that realize high-quality image with horizontal resolution 520TV lines, and an LSI that perfoms these algorithms for the secuirity/surveillance camera using a single CCD with complementary color filter array. These algorithmsconsist of three methods as follows : 1)horizontal aperture signal generator according to choroma data. 2)new pseudo-color reductive function to control by horizontal & vertical changes of signals. 3)1/4 offset double sampling function to improve a feeling of definition.
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  • Color Calibration System using Neural Networks
    Makio Gotoh, Tatsuya Tanaka, Masanori Minami, Haruo Yamamoto
    Article type: Article
    Session ID: IPU2001-25/CE2001-9
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_49
    CONFERENCE PROCEEDINGS FREE ACCESS
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    When color copiers calibrate colors, the input signal RGB from the color scanner is converted into the output signal CMYK to the color printer. Among the conversion of the color calibration from RGB to CMYK, three independent models(the scanner input model, the printer output model, and the black generation model)have been developed using each neural network. The scanner input model is the conversion from scanner's RGB to L^*a^*b^*. The printer's output model is the coversion from L^*a^*b^* to printer's CMY signals. The black generation model is the conversion from L^*a^*b^* to printer's K signals.
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  • A Capacitive Fingerprint Sensor with Low-Temperature Poly-Si TFTs
    Ryuichi Hashido, Akihiro Suzuki, Akihiko Iwata, Tetsuya Ogawa, Tatsuki ...
    Article type: Article
    Session ID: IPU2001-26/CE2001-10
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_55
    CONFERENCE PROCEEDINGS FREE ACCESS
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    We have developed a capactive fingerprint sensor using low-temperature poly-Si TFTs and succeeded to getting good results about fingerprint certifications. The array area of this sensor is 20mm x 15mm. High resolution of 423dpi(60μm pitch)has been realized by a nobel cell structure only with one transistor and one sensor plate. This method is able to get big dynamic range for protecting leak current to other arrays by utilizing the big threshold voltage of low-temperature poly-Si TFTs.
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  • 3CCD Camera System with 1.5Mega Pixel Still Shot
    Takeshi Hamasaki, Koichi Toyomura, Shuji Yano, Masaaki Nakayama, Yoshi ...
    Article type: Article
    Session ID: IPU2001-27/CE2001-11
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_61
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A new 3CCD camera system with 1.5mega pixel still shot has developed by utillizing the technologies of pixel shift aligned 3CCD camera. Adopting 1/2pixel shift alignment in horizontal and vertical directions, and "4 times density signal processing method", it can provide 4 times as many luminance pixels as those of a original CCD. 1.5mega(1536x960)pixel still pictures and high quality motion pictures in DV format can be obtained. The horizontal and vertical resolutions in still pictures are 800 and 700TV lines in each. At the same time, the system has been simplified and designed to save power, finally a low cost and a low power model, just the same as a single CCD type, has developed.
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  • A Novel Lateral Overflow Drain Technology for High Quantum Efficiency CCD Imagers
    Satoru Adachi, Hidetoshi Shimada, Hiroyuki Gotoh, Koichi Mizobuchi
    Article type: Article
    Session ID: IPU2001-28/CE2001-12
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_67
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A novel antiblooming technology featuring a junction field effect transistor (JFET)in lateral directions has been developed for the high quantum effciency CCD imagers. The lateral overflow drain (LOD)using a sub-0.25μm JFET has been fabricated and found to be shrinkable to sub-1μm φ which corresponds to the 3μm pixel. The electrical performance has also been characterized by applying the new LOD to the sub-5μm pixel two-polysilicon electrodes virtual phase CCD(VPCCD). The antiblooming barrier has been simply controlled by the LOD drain bias. The superior antiblooming property has also been demonstrated even in the excessively bright light condition. The use of the new LOD for the VPCCD shows no significant degradation of the dark current.
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  • A 1/2.7 format 2.17M square pixel CCD Image Sensor
    Shinji Uya, Noriaki Suzuki, Kazuaki Ogawa, Tetsuo Toma, Tetsuo Yamada
    Article type: Article
    Session ID: IPU2001-29/CE2001-13
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_73
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A 1/2.7 format 2.17M square pixel CCD image sensor has been developed. Four fields read-out method has been employed to increase a charge transfer capability of VCCD, a charge storage capability of photo-diode and an aperture width. New signal adding method has improved movie quality with suppressing a spurious color, lowering the smear ratio by half and heightening sensitivity double. Still imaging sensitivity of 250mV, saturation voltage of 430mV have been realized.
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  • APS(Advanced Photo System)Size 3.2M-Pixel Honeycom CCD Image Sensor
    Tomohiro Sakamoto, Tetsuo Yamada, Tetsuo Toma, Masayuki Takebuchi, Kaz ...
    Article type: Article
    Session ID: IPU2001-30/CE2001-14
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_79
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A 3.2M-pixel CCD sensor which specializes in a single reflex camera for APS size has developed. We have obtained high sensitivity of over 1500mV and wide dynamic range of 82dB by using PIA(Pixel Interleaved Array)CCD technology.
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  • 1/1.7 format 3.3M pixel Honeycom CCD sensor
    Katsumi Ikeda, Hideki Wakoh, Tetsuo Yamada, Tetsuo Toma, Eiichi Okamot ...
    Article type: Article
    Session ID: IPU2001-31/CE2001-15
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_85
    CONFERENCE PROCEEDINGS FREE ACCESS
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    A 1/1.7 format 3.3M pixcel Honeycom CCD image sensor has been developed, which realizes high resolution of 1500 TV-line. An improved Honeycom CCD architecture has conquered the device performance degradation caused by a pixcel scale down. As a result, it has high saturation voltage of 700mV, wide dynamic-range of 70dB and high sensitivity of 305mV(at 5100K, IRcut, 1200cd/m^2, F5.6). These characteristics are equivalent to those 4.5μm square pixel. An unique wedge-shaped VCCD electrodes heighten charge transfer effciency over 99%.
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  • [title in Japanese]
    Article type: Appendix
    Pages App1-
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_App1
    CONFERENCE PROCEEDINGS FREE ACCESS
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  • [title in Japanese]
    Article type: Cover
    Pages Cover2-
    Published: March 16, 2001
    Released on J-STAGE: June 23, 2017
    DOIhttps://doi.org/10.11485/itetr.25.28.0_Cover2
    CONFERENCE PROCEEDINGS FREE ACCESS
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