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Article type: Cover
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Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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Article type: Index
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Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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Futa MOCHIZUKI, Taishi TAKASAWA, Keiichiro KAGAWA, Min-Woong SEO, Keit ...
Article type: Article
Session ID: IST2014-18
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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To observe ultra-fast phenomena, we have proposed an ultra-high-speed CMOS image sensor based on the multi-aperture structure. Every aperture is operated with an independent shutter pattern and accumulates temporally-multiplexed signals in pixel. After that, temporally-resolved ultra-high-speed images are reproduced by solving an inverse problem using the given shutter patterns and a captured multi-aperture image. The time resolution is defined only by on-stage charge transfer time and the clock skew between the apertures. Therefore, we believe that the proposed method realizes the highest time resolution. This paper describes a simulation of the method and experimental results of the sensor.
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Hirotaka SUZUKI, Keiichiro KAGAWA, Zhang Bo, Keita YASUTOMI, Shoji KAW ...
Article type: Article
Session ID: IST2014-19
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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There are increasing demands of power reduction for implanted devices and environmental monitoring devices. A pulse width modulation (PWM) method is useful for power reduction. In this method, power supply voltage can be reduced while maintaining the dynamic range by representing a pixel signal with a pulse width. However, the 3-transistor pixel in the previous work is not suitable for high quality imaging in dim conditions. In this study, a PWM method for 4-transistor pixel using pinned photodiodes, which realize low power supply and high quality at the same time, is discussed.
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Takahiro ANRAKU, Takayuki HAMAMOTO
Article type: Article
Session ID: IST2014-20
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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Conventional image sensors have narrow dynamic range in comparison to human vision. This causes image degradation by over exposure or under exposure. For that reason, vehicle mounted camera or surveillance camera requires wide dynamic range image sensors. But it is required to adjust the tone range to the display so as to render the image suitably. We propose a method for controlling variable integration time image sensor in real time in this paper. Also we describe the result of controlling by FPGA on which the proposed method is implemented.
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Han SHO, Daiki KIMOTO, Kiichi FURUKAWA, Hidetake SUGO, Tohru TAKEDA, K ...
Article type: Article
Session ID: IST2014-21
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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In this paper, the ultra-high speed (UHS) video capturing results of time dependent dielectric breakdown (TDDB) of MOS capacitor are reported using the UHS camera with the maximum frame rate of 10M frame per second (fps). In order to capture the breakdown, we set a trigger circuit which detects the rapid current increase through the MOS capacitor, which supplies the trigger pulse to the UHS camera. Some movies have succeeded to capture the intermittent emissions of light on some points of the gate during the breakdown. From the movie taken at 1 Mfps, the order of the time interval of the emission of light was about 10 μsec and simultaneous emission of light at multiple points was not observed. From the movie taken at 10 Mfps, the time span of the emission of light was less than 1 μsec.
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Takahiro AKUTSU, Shun KAWADA, Yasumasa KODA, Taiki NAKAZAWA, Rihito KU ...
Article type: Article
Session ID: IST2014-22
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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This paper reports on the two types of new photodiode array sensors with fast readout speed and high stability to ultraviolet (UV) light exposure. These sensors have high full well capacity for absorption and high sensitivity for emission in each. By introducing multiple readout paths along the long side of the rectangle photodiode (PD), both types have achieved more than 150 times faster readout speed compared with general types. By introducing a PD structure with a thin and steep dopant profile p^+ layer formed on a flattened Si surface, a higher stability of the light sensitivity to UV light exposure was confirmed compared with a general PD structure.
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Hajime HAYAMI, Kiyotaka SASAGAWA, Toshihiko NODA, Takashi TOKUDA, Jun ...
Article type: Article
Session ID: IST2014-23
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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We developed a prototype of battery-powered implantable image sensor unit and successfully demonstrated its operation in phosphate buffered saline (PBS) solution as simulant body solution. We also proposed its equivalent circuit model for simulation. The measurement result of transmitted signal waveforms are in good agreement with the simulation result. Images obtained by the sensor were successfully recovered from the sensor output signal received through the PBS.
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Taichi KASUGAI, Keita YASUTOMI, Sangman HAN, Nobukazu TERANISHI, Keiic ...
Article type: Article
Session ID: IST2014-24
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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This paper presents evaluation of lateral electric field charge modulator (LEFM). We previously reported lock-in pixels with LEFM for high speed modulation. We measured the changes in potential of photodiode with gate voltage, and investigated the influence of channel width. Also, we report comparison of measurement and simulation results.
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Yuki NISHIOKA, Keiichiro KAGAWA, Min-Woong SEO, Keita YASUTOMI, Shoji ...
Article type: Article
Session ID: IST2014-25
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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We propose an image sensor based on a complete pixel-parallel architecture which can switch three operational modes: multi-point confocal microscopy, fluorescence lifetime imaging microscopy, and fluorescence correlation spectroscopy. We explain the method to control pixel readout and the pixel architecture. In the proposed system, multi-beam excitation enables to reduce optical damage on a specimen, and we can obtain molecular information for different observation modes as an image.
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Hidenori TABATA, Takayuki HAMAMOTO
Article type: Article
Session ID: IST2014-26
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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PFM (Pulse Frequency Modulation) pixel has a problem of low photosensitivity in principle. In conventional pixel structure, lowering capacitance of the photodiode, which improves photosensitivity of PFM pixel, requires a reduction in photosensitive area. We propose a low-capacitance structure using stacked device technology. Our proposed structure can realize a low-capacitance by connecting a minute capacitance in series to just beneath photodiode. In addition, we analyzed noise increment resulting from lowering capacitance to decide the lower limit of the capacitance of photodiode. As a result, the proposed structure can reduce less than one tenth of the capacitance of conventional photodiode.
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Hironari TAKEHARA, Kiyotaka SASAGAWA, Toshihiko NODA, Takashi TOKUDA, ...
Article type: Article
Session ID: IST2014-27
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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Enzyme linked-immunosorbent assay (ELISA) is a diagnosis method used for early stage cancers and other diseases. Recently, digital ELISA has been proposed to achieve higher sensitivity. In order to distribute the diagnosis system widely in clinical practice, we have proposed a compact observation system. In the system, fluorescence microscope was replaced by CMOS image sensor, which can realize palmtop equipment. The properties of CMOS image sensor and fluorescence filter should be optimized for the system. We simulated the characteristics of micro pillar absorption filter surrounded by metal, which can effectively transmit fluorescence from reaction chambers to photodiodes of CMOS image sensor.
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Rihito KURODA
Article type: Article
Session ID: IST2014-28
Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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In this paper, requirements for image sensors to achieve photon detection and photon counting are overviewed. And recent R&D trend of high S/N image sensors with one photon-level resolution are overviewed.
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Article type: Appendix
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Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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Article type: Appendix
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Published: May 26, 2014
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Article type: Appendix
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Published: May 26, 2014
Released on J-STAGE: September 21, 2017
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