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Displaying 1-13 of 13 articles from this issue
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Article type: Cover
Pages Cover1-
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (13K) -
Article type: Index
Pages Toc1-
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (49K) -
Ikuya Tagawa, Simon Greaves, Hiroaki Muraoka, Yasushi KanaiArticle type: Article
Session ID: MMS2009-64
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSShingle-write is the technology to achieve higher track density without reducing head pole. Because the write-ability limit due to narrower track width is the key challenge, breakthrough against the write limit is the purpose in not only HAMR and MAMR but also BPM and Shingle-write. The concept, pros and cons on Shingle-write based on activities in the Storage Research Consortium (SRC) is discussed in this paper.View full abstractDownload PDF (1208K) -
Jun ARIAKE, Yuji KONDO, Shunji ISHIO, Naoki HONDAArticle type: Article
Session ID: MMS2009-65
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSFine magnetic dot arrays with an areal density around 1Tbit/in^2 were fabricated for obtaining fabrication process issues and design parameter of bit patterned media (BPM). In dot size analysis, a size distribution of about 1nm of standard deviation existed. This distribution corresponds to about 5kOe in H_k distribution in BPM from a simulated result. In dot period analysis, a dispersion value of about 5% was found in both a scanning direction of EB exposure and a direction perpendicular to the scanning direction. Dot period dispersion must be reduced because it is proportional to switching field distribution (SFD) from a simulated result. Undulation analysis along an EB scanning direction in fine magnetic dots revealed that magnetostatic interaction can be occurred between dots in cross track direction. A very stable and accurate process is required for BPM fabrication at 1Tbit/in^2 and beyond.View full abstractDownload PDF (1038K) -
[in Japanese], [in Japanese], [in Japanese], [in Japanese], [in Japane ...Article type: Article
Session ID: MMS2009-66
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
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Junguo XuArticle type: Article
Session ID: MMS2009-67
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
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Chiharu MITSUMATA, Akimasa SAKUMA, Kazuaki FUKAMICHIArticle type: Article
Session ID: MMS2009-68
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSFor the material design of thin exchange bias layer to reduce the read gap length, the exchange bias between the ferromagnetic (FM) and antiferromagnetic (AFM) bilayer was investigated within the framework of the classical Heisenberg model. The dependence of the exchange bias on the AFM layer thickness was also calculated by using the Landau-Lifshitz-Gilbert equation. The triple-Q (3Q), T1 and AF-I spin structures are obtained in the disordered γ-phase, ordered L1_2- and L1_0-type lattices, respectively. The exchange bias is caused by the formation of the interfacial domain wall in the AFM layer, and the critical thickness d_c of AFM layer is dominated by the varied spin structures. Consequently, the relation of the critical thickness can be represented as √<3>d^<3Q>_c=√<2>d^<T1>_c=d^<AF-I>_c.View full abstractDownload PDF (912K) -
Yo SATO, Katsumi HOSHINO, Susumu OKAMURA, Keizo KATO, Hiroyuki HOSHIYAArticle type: Article
Session ID: MMS2009-69
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThe effect of current screen layer on the bias voltage dependence of a magnetoresistive (MR) ratio was studied for a Heusler alloy-based current perpendicular-to-plane giant-magnetoresistive (CPP-GMR) sensor. The MR ratio was improved by using the current screen layer for the Heusler alloy based CPP-GMR sensor. In addition, the bias voltage dependence of the MR ratio was also improved. This improvement in bias voltage dependence appears to be due to the suppression of the magnetic moments fluctuation near a pinhole which reduces the spin-torque effect.View full abstractDownload PDF (489K) -
Tomotaka Yabe, Kiyoshi Tateishi, Hirokazu Takahashi, Atsushi OnoeArticle type: Article
Session ID: MMS2009-70
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSA ferroelectric probe memory is one of the promising candidates as a super high-density storage system. To realize the ferroelectric probe memory, more speed-up signal detection technique is required to reproduce super high-density data. In this paper, the noise-canceling function was provided to reduce interfering signal that increases when speed-up signal detection. With this function, we obtained the recorded polarization information signal with the noise low enough.View full abstractDownload PDF (796K) -
Jun ISHIKAWAArticle type: Article
Session ID: MMS2009-71
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSThis article proposes a controller optimization for given external inputs, i.e., fluttering NRRO, RRO, sensor noise, and torque disturbance to be called "run-outs." This run-out oriented controller design is based on a response surface method and provides an optimal controller that minimizes positioning error (PE) due to these run-outs. The proposed method is not only for controller tuning but also gives us a cue to seek a direction about which disturbance we should prioritize to be reduced from a viewpoint of system integration.View full abstractDownload PDF (1242K) -
Article type: Appendix
Pages App1-
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
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Article type: Appendix
Pages App2-
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (78K) -
Article type: Appendix
Pages App3-
Published: November 13, 2009
Released on J-STAGE: September 20, 2017
CONFERENCE PROCEEDINGS FREE ACCESSDownload PDF (78K)
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