Highly efficient two-unit all-phosphorescent white devices on a built-up light extraction substrate (BLES) were developed. As a result of extremely high light outcoupling efficiency of BLES, the device showed a high efficacy of 114 lm/W at 1,000 cd/m^2. External quantum efficiency was almost 50 % and was also achieved in a flat panel with an emissive area of 25 cm^2. Color coordinates of the panel met Energy Star^[○!R] criteria of solid-state lighting with CIE1931 (x, y)=(0.477, 0.423), and color rendering index was 81.
We demonstrate a novel pathway to open an ultimate electroluminescence (EL) efficiency by using simple aromatic compounds displaying efficient thermally activated delayed fluorescence (TADF) having high photoluminescence (PL) efficiency. We found that a proper design of organic molecules enables the formation of a small energy gap between singlet and triplet excited states, resulting in the enhanced T_1 to S_1 reverse intersystem crossing (ISC). We also demonstrate very high efficiency EL using a new series of TADF materials.
It is easy to fabricate high uniform polycrystalline thin films having high thermal stability by solution process using liquid crystalline materials. Especially, our developed liquid crystalline phenyl-benzothienobenzothiophene derivative (Ph-BTBT-10) exhibits highly ordered liquid crystal phase and uniformity and thermal stability of Ph-BTBT-10 crystalline films are much improved. The mobility of polycrystalline thin films of Ph-BTBT-10 after thermal anneal shows high average mobility over 10cm^2/Vs and variation of the mobility is less than 10% in 22 TFT devices. We conclude that it is important to use the liquid crystallinity for applicative organic thin film transistors.
We have fabricated organic thin film transistors by thermal lamination process, which is expected as solvent-free, low temperature, continuous and high throughput fabrication process of organic flexible sheet devices. We also tried to apply xerography to make pattern of organic semiconductor toner. Xerography and succeeding thermal lamination will enable us to construct solvent-free printing process. In addition, we evaluated a flexibility of our thin film transistor structure by finite element calculation, and revealed the stress/strain distribution in the device.
Microcontact printing and reverse offset printing techniques, which are able to fabricate super fine patterns, and screen offset printing technique, which is able to make high quality patterns by high performance, will be introduce as fabrication processes for printed electronics devices.