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原稿種別: 表紙
p. Cover1-
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーPDF形式でダウンロード (13K) -
原稿種別: 目次
p. Toc1-
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーPDF形式でダウンロード (63K) -
増谷 光正原稿種別: 本文
セッションID: IPU2000-8
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーThe basic features of infrared imaging is described. and the technical bases necessary to support a good infrared imaging are discussed. and also this paper reviews the outlook of IR imaging technologies.抄録全体を表示PDF形式でダウンロード (1226K) -
千葉 一浩, 田中 昭生, 遠藤 勉, 奥山 邦幸, 川原 章裕, 飯田 潔, 塚本 七生, 寺西 信一原稿種別: 本文
セッションID: IPU2000-9
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーA readout circuit for 320 x 240 uncooled infrared microbolometer FPA has been developed. The readout circuit has features such as the common-base integration, the bias canceling, the direct FPN compensation and BiCMOS. The commom-base integration circuit can directly integrate the bolometer current and exhibits low noise and no degradation of the signal. To minimize noise in the post integration circuit, the integration gain has to be increased. The bias canceling circuit and the FPN compensation circuit are directly connected to the integration capacitor and the integration gain of approximately 20〜30 has been achieved by removing the unnecessary current component from the integration current. This operation has served to increase the signal current at the same time. BiCMOS process contributes to reduction in the 1/f noise. By employing 37μm unit cell, the lens size has decreased and the camera size can be made small. Equivalent input noise became 6.2μVrms.抄録全体を表示PDF形式でダウンロード (733K) -
石津谷 徹, 鈴木 純児, 赤川 圭一, 風間 常行原稿種別: 本文
セッションID: IPU2000-10
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーWe succeeded the detection of infrared radiation with the optically readable bi-material infrared detector that was already proposed as one of the uncooled type infrared detector. This paper reports the principle and structure of this detector. Experimental results of thermal bending property and infrared responsivity of the test device are also reported. NETD of 0.25K was obtained with the test device having 75 square micron unit pixel.抄録全体を表示PDF形式でダウンロード (614K) -
平賀 礼浩, 阿部 康彦, 安岡 義純原稿種別: 本文
セッションID: IPU2000-11
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーOne- and Two-dimensional slot antenna coupled micro-bolometer arrays were fabricated, and the receiving properties for 118μm CH_3OH-laser radiation were investigated. It was obtained that the optimum separation of N slots arrays is 0.5λ_d in the E-plane and 1.6λ_d in the H-plane, and the result that the detected voltage increased in linearly proportional to the number of the slots. (λ_d is the dielectric wavelength.)抄録全体を表示PDF形式でダウンロード (715K) -
兵藤 一行, 安藤 正海原稿種別: 本文
セッションID: IPU2000-12
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーWe have completed a clinical intravenous coronary angiography system comprising a large-size view area produced by an asymmetric reflexion from a silicon crystal using an intense synchrotron radiation from a multipole wiggler at the Advanced photon Ring(AR), KEK, and a two dimensional detector. This two dimensional system has been successfully adopted to the clinical applications. An advantage of the system is that two-dimensional dynamic imaging of the cardiovascular system can be achieved due to its two-dimensional radiation field.抄録全体を表示PDF形式でダウンロード (429K) -
伊藤 和輝, 雨宮 慶幸原稿種別: 本文
セッションID: IPU2000-13
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーCCD-based X-ray detectors are getting to be used for X-ray diffraction studies especially in the studies where real time(automated)measurements and time-resolved measurements are required. Principles and designs of two typical types of CCD-based detectors are described; one is the system in which x-ray image intensifiers are coupled to maximize the detective quantum efficiency for time-resolved measurements, and the other is the system in which tapered optical fibers are coupled for the reduction of the image into the CCD, which is optimized for automated measurements for protein crystallography. These CCD-based X-ray detectors have image distortions and non-uniformity of response to be corrected by software. Correction schemes which we have developed are also described.抄録全体を表示PDF形式でダウンロード (1031K) -
村井 裕輔, 指田 孝男, 渡部 善幸, 峯田 貴, 小林 誠也原稿種別: 本文
セッションID: IPU2000-14
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーA thermistor-bolometer made the field of view narrow with self-cancellation is proposed. Thermal infrared detectors used for radiation thermometers have generally some weak points. One of them is a drift caused by the fluctuation of incident rays from wide angle, which contain an inner radiation of optical apparatus. The structure fabricated with micro-machine technology is studied to reduce the drift by the self-cancellation. The thermistor-bolometer is composed of two pairs of thin film thermistors, namely sensing pair and cancellation one. As a result, the self-cancellation for incident rays from wide angle is proved.抄録全体を表示PDF形式でダウンロード (768K) -
後藤 靖, 木村 光照原稿種別: 本文
セッションID: IPU2000-15
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーPrinciple on the transistor-thermistor of the bipolar transistor developed by us is extended to that of the MOSFET. Characteristics of the MOSFET in the subthreshold region are similar to that of the bipolar transistor, namely, the source of MOSFET corresponds to the emitter of bipolar transistor, the pre-channel to the base, and the drain to the collector in the subthreshold of the MOSFET. It was confirmed using a commercial p-channel MOSFET and a fabricated p-channel MOSFET that the drain current Id in this subthreshold region had an exponential factor for the ambient temperature T under a constant gate-voltage Vg and a constant drain-voltage Vds. This fact means that the drain-resistance Rd in the subthreshold region of the MOSFET can be treated as a thermistor under the constant Vds, and its thermistor-constant B can be varied with Vg, as seen in the transistor thermistor of the bipolar transistor.抄録全体を表示PDF形式でダウンロード (533K) -
上野 雅史, 石川 智広, 中木 義幸, 遠藤 加寿代, 太田 泰昭, 曽根 孝典, 木股 雅章原稿種別: 本文
セッションID: IPU2000-16
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーA 320x240 element uncooled infrared FPA(Focal Plane Array)with series PN junction diodes fabricated on a SOI(Silicon On Insulator)wafer has been developed. The forward-biased diodes are used as a temperature detector by measuring the voltage drop across them. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI layer which has few defects. The pixel contains an infrared absorbing structure with a high fill factor of 90% to achieve high absorption. The FPA has shown the NETD(Noise Equivalent Temperature Difference)of 0.17K with f/1.0 optics. The whole structure can be fabricated in a conventional silicon LSI process line. This feature considerably reduces the cost of uncooled FPAs.抄録全体を表示PDF形式でダウンロード (1041K) -
山下 豊, 小田 元樹, 上田 之雄, 土屋 裕原稿種別: 本文
セッションID: IPU2000-17
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーA time-resolved spectroscopy(TRS)was introduced to quantify the concentration of absorber in scattering media like living tissue non-invasively. The TRS system employing a three-wavelength picosecond light pulser enabled to measure oxy- and deoxy-hemoglobin in living tissue every one second. And our algorithm for optical computed tomography is also discussed.抄録全体を表示PDF形式でダウンロード (421K) -
阪上 隆英, 久保 司郎原稿種別: 本文
セッションID: IPU2000-18
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーApplicability of the newly developed two different lock-in thermographic NDT techniques is discussed. One of the proposed techniques is based on the lock-in measurement of the singular temperature field, which appears near crack tips under the application of periodically modulated electric current. Experimental study is made on the resolution and the applicability in the detection of through-thickness cracks embedded in steel and aluminum alloy plate samples. Modulated electric current is applied to the cracked sample by an induction coil. Temperature amplitude and phase delay thermal images synchronized to the reference current modulation signal are taken by the lock-in thermography. Significant temperature rise related to singular temperature field is observed at the crack tips in the lock-in thermal images. It is found that the cracks are sensitively detected by the lock-in thermography technique combined with near-tip singular temperature field measurement. The other technique is based on the lock-in measurement of the surface temperature under the application of periodical xenon light heating. Experimental study is made on the applicability to the detection of flat bottom hole defects. Xenon light beam is periodically chopped by the electric shutter to stimulate thermal wave in the objective body. In-phase and out-of-phase temperature amplitude images are taken by the lock-in thermography, synchronized to the reference signal of the electric shutter operation. It is found that the location and size of the defects can be identified by the localized contrast change in the out-of-phase images. Further, the depths of the defects can be identified from the heat penetration depth, which is changed by the frequency of thermal wave stimulation.抄録全体を表示PDF形式でダウンロード (921K) -
中村 賢, 高橋 幸郎原稿種別: 本文
セッションID: IPU2000-19
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーWe have developed the technologies of forming microchannels on photosensitive glass as the MCP substrate. Jet etching of photosensitive glass processed by a suitable UV exposure and crystallization could fabricate microchannels with an aspect ratio of about 20. Lead-glass films as secondary electron multiplication films prepared by sol-gel method and CVD were examined. Their films added Mg of 5% have a higher coefficient of secondary electron radiation.抄録全体を表示PDF形式でダウンロード (602K) -
藤井 俊夫, 西野 弘師, マサルカル プラフラ, 宮本 義博原稿種別: 本文
セッションID: IPU2000-20
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーWe investigated the influence of the presence of GaAs substrates on the sensitivity of QWIP-FPA(Quantum Well Infrared Photodetectors Focal Plane Array)with the pseudo-random grating optical coupler. When the thick GaAs substrate was removed from the QWIP-FPA back surface, its sensitivity increased about ten times over that of QWIP-FPA whose substrate remained. This sensitivity enhancement was observed when selected pixels were illuminated by the IR incidence from outside QWIP, using the bar patterned high temperature targets. For uniform IR incidence for all pixels, the sensitivity was independent on the presence of the thick GaAs substrate. These results clearly indicate that the internal total reflection is confined into one pixel for thin film QWIP-FPA and it runs away from the originally incident pixel for thick substrate QWIP-FPA. We experimentally confirmed that the pseudo-random grating coupler for QWIP has really enhanced the IR absorption by utilizing multi internal total reflections. A method for simulation of optical coupling in QWIP with two-dimensional random gratings has been developed. It provides information on practical aspects of design and fabrication. The absorption efficiency varies with unit cell size and has a maximum value when cell width to wavelength ratio is 1.2. A novel optical coupling diffraction pattern with elliptical curve for QWIPs is developed using the simulation. It provides high coupling efficiency and fabrication ease. Improved performance has been experimentally verified.抄録全体を表示PDF形式でダウンロード (722K) -
原稿種別: 付録等
p. App1-
発行日: 2000/02/25
公開日: 2017/06/23
会議録・要旨集 フリーPDF形式でダウンロード (83K)
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