The stress analysis of packaging on packaging (POP) under random vibration loading is conducted using the finite element model. The effect of structural parameters on solder joint stresses is analyzed by sensitivity analysis. Stress fitting is performed using the response surface method (RSM), and the optimization module is used to optimi-ze the structural parameters of POP packaging. The results demonstrate a reduction of 0.016 and 0.0031MPa in upper and lower solder joint stresses, respectively. This optimization of the structural parameters improves the reliability of the electronic packaging structure.

The output voltage and reference current are to be considered in the design of voltage outer loop for boost PFC converter. However, the dynamic response of output voltage and reference current accuracy affects each other, which complicates the compensator design. In this letter, a voltage outer-loop compensator method is proposed to design the compensator parameters by non-dominated sorting and hierarchical clustering algorithms with the output voltage dynamic performance and reference current accuracy as the objectives, respectively. It ensures the reference current accuracy while improving the performance of output voltage dynamic response. The experimental results verify the effectiveness of the method.

To address the issue of poor dynamic regulation caused by uncertainties and disturbances in the external conditions of the High step-up quasi-Z-source dc-dc boost converter (HSQZSC) control system, an integral sliding mode (ISM) controller is designed to ensure system robustness and fast response. Firstly, the operating principle of HSQZSC is analyzed to establish a mathematical model. Secondly, a sliding surface is designed using the output voltage error, inductor current error, and their integrals as state variables. Then, the conditions for stable operation of ISM are derived, and the parameter design is analyzed. Finally, by comparing with conventional control strategy using simulation and experimental platform, the results demonstrate the feasibility and effectiveness of the designed ISM control strategy.

This paper presents a dual-band (DB) high efficiency power amplifier (PA) with two adjustable transmission zeros (TZs). The parallel Two Section Transmission Line (TSTL) is introduced in the impedance matching network (IMN), generating adjustable TZs and compensating for the resulting unrelated difference of admittance at DB fundamentals, which enables the DB IMN exhibits adjustable TZs out-of-band. The matching bandwidth of the DB IMN is further analyzed to seek the target impedance for broadband DB matching. The series TSTL is employed to modulate the target impedance to the impedance of the drain at DB fundamentals while satisfying the high efficiency operating conditions at DB harmonics. For validation, a DB PA is designed and fabricated with a Cree CGH40010F GaN transistor. The fabricated DB PA features the saturated output power of 42.6dBm and 42.0dBm with the Power-Added Efficiency (PAE) of 66.1% and 67.8% at 0.9GHz and 2.4GHz, respectively. Specially, the bandwidth of the DB PA is 150MHz, and two adjustable TZs are shown out-of-band.