Tunneling Dielectric Thin-Film Transistor (TDTFT), which was proposed to reduce the gate-off current by utilizing a tunneling effect, was fabricated in a bottom-gate structure. For the tunneling dielectric, a 1.7-nm-thick SiN
x film was deposited onto the source and drain by a low-pressure chemical vapor deposition (LPCVD) method. The gate-off current of the TDTFT was reduced less than 1/10 in comparison with a conventional TFT. Although the subthreshold characteristics and the g
m were degraded due to the tunnel resistance, it will be compensated by further thinning of SiN
x film or using the material with the barrier height lower than SiN
x.
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