IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Volume 3, Issue 10
Displaying 1-3 of 3 articles from this issue
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LETTER
  • Semi-analytical BER performance of a direct detection soliton transmission system
    F. M. Abbou, H. T. Chuah, S. P. Majumder, A. Abid
    2006 Volume 3 Issue 10 Pages 203-208
    Published: 2006
    Released on J-STAGE: May 25, 2006
    DOIhttps://doi.org/10.1587/elex.3.203
    JOURNAL FREE ACCESS
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    A semi-analytical approach is presented, to evaluate the bit error rate (BER) performance of a 10Gb/s direct detection soliton transmission link in the presence of group velocity dispersion (GVD), self-phase modulation (SPM), and accumulated amplifiers' spontaneous emission (ASE). The results show that the BER performance is limited by accumulated ASE and inter-symbol interference due to pulse distortion caused by GVD and SPM. It is found that for transmission distance of 3000-km with cascaded EDFAs the receiver sensitivity corresponding to BER of 10-9 are -25.2dBm, -20.7dBm and -13.2dBm for amplifier gain of 10dB, 20dB and 30dB respectively.
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  • Cellular automaton modelling of surface discharge dynamics for EMC problems
    A. S. Adalev, M. Hayakawa, D. I. Iudin, N. V. Korovkin, E. E. Selina, ...
    2006 Volume 3 Issue 10 Pages 209-215
    Published: 2006
    Released on J-STAGE: May 25, 2006
    DOIhttps://doi.org/10.1587/elex.3.209
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    Surface charge distribution on aircraft windshields and front head shields of missiles is highly inhomogeneous and it may cause creeping discharge appearance. The discharge produces strong electromagnetic emission, which get into the bodies through apertures. A fractal model based on a cellular automaton network reproducing the dynamics of surface electrical charge distribution is proposed. The model allows us to obtain both integrated characteristics of the discharge and its local properties. The latter is of extremely importance for EMC applications.
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  • A 10.0Gb/s all-active LVDS receiver in 0.18µm CMOS technology
    Panduka Wijetunga
    2006 Volume 3 Issue 10 Pages 216-220
    Published: 2006
    Released on J-STAGE: May 25, 2006
    DOIhttps://doi.org/10.1587/elex.3.216
    JOURNAL FREE ACCESS
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    Results for a 10.0Gb/s all-active LVDS receiver, designed using active bandwidth improvement strategies, are presented. The generalized model generated for the active peak load shows that the transfer characteristic of the load is similar to that of inductive shunt peaking, and can achieve bandwidth improvements comparable to that of on-chip inductive shunt peaking without the associated area penalty. The measured 3dB bandwidth of the transceiver is 6.0GHz, and the input sensitivity (BER < 10-13) at 10.0Gb/s and 11.0Gb/s are 80mVpp and 100mVpp respectively. The total transceiver power consumption, including the 50Ω source terminated output driver, is 60mW.
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