IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Volume 1, Issue 10
Displaying 1-3 of 3 articles from this issue
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LETTER
  • A new measurement technique on inherent-ring-resonance frequency using ring filters
    Hee-Ran Ahn, Kwyro Lee
    2004 Volume 1 Issue 10 Pages 269-274
    Published: 2004
    Released on J-STAGE: August 25, 2004
    DOIhttps://doi.org/10.1587/elex.1.269
    JOURNAL FREE ACCESS
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    As an application of the ring filters, a new and simple method to determine an inherent-ring-resonance frequency and an effective loss tangent at a frequency of interest is introduced. When a certain condition is satisfied in the ring filters, a frequency, where all the excited power is reflected, exists. That is the inherent-ring-resonance frequency and the effective loss tangent from its reflection coefficient may be obtained correctly. To verify the method, two ring filters have been fabricated in microstrip lines and the measured results show good agreement with the predicted ones.
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  • Face authentication system using pseudo Zernike moments on wavelet subband
    Ying-Han Pang, Andrew Teoh B. J., David Ngo C. L.
    2004 Volume 1 Issue 10 Pages 275-280
    Published: 2004
    Released on J-STAGE: August 25, 2004
    DOIhttps://doi.org/10.1587/elex.1.275
    JOURNAL FREE ACCESS
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    Moments are widely-used feature extractors due to their superior discriminatory power and geometrical invariance. Unfortunately, moments suffer heavy computational load and result long time spending. In viewing of the problem, we proposed a new technique in using moments- apply moments on wavelet subband. In this study, pseudo Zernike moments are selected as feature extractors due to its enhanced feature representation capability. Implementation of moments on wavelet subband affords advantages of performing local-to-global analysis and decomposing image into lower resolution. Experimental results show that this hybrid achieves computational time reduction of 36.23% with enhanced authentication performance.
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  • Photoluminescence lifetime of Ir(ppy)3 used for organic light emitting diodes
    Taiju Tsuboi, Nadeer Aljaroudi
    2004 Volume 1 Issue 10 Pages 281-286
    Published: 2004
    Released on J-STAGE: August 25, 2004
    DOIhttps://doi.org/10.1587/elex.1.281
    JOURNAL FREE ACCESS
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    We calculated temperature dependence of photoluminescence (PL) lifetime of fac tris(2-phenylpyridine) iridium (Ir(ppy)3) doped in 4, 4'-N, N'-dicarbazole-biphenyl (CBP). The emitting triplet state consists of three zero-field splitting substates. Taking into account non-radiative transitions among these substates, rate equations for the populations of the substates are solved and three PL lifetimes are derived. A good agreement has been obtained for the temperature dependence between the observed lifetime and calculated long lifetime.
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