Single crystals of ZnSe grown by the Bridgeman method under high, inert gas pressure contain many lattice defects; for example, the stacking fault is predominant in the crystals grown by the authors.
To clarify the relationship between the shapes of etch pits and crystallographic polarity, the etch pits and the light figures were observed and furthermore the ratio of scattered X-ray intensities, FF
* (
hkl)/FF
* (
hkl) were examined. From our experimental results, it was confirmed that the plane of flat bottomed triangular pits and that of deep triangular pits corespond to A (111)
Zn and B (111)
se surfaces, respectively.
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